Si field emitter arrays fabricated by anodization and transfer technique

Katsuya Higa, Kiyoaki Nishii, Tanemasa Asano

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Abstract

Field emitter arrays made of single-crystal Si are fabricated by anodization and transfer techniques. The anodization of Si which has n/p junctions produces field emitter tips. The emitter tips are then transferred to another Si substrate by the direct bonding. It has been found that an optimum doping range exists for successful bonding and transfer of the emitter tips. Field emission characteristics of field emitter arrays thus fabricated are also reported.

Original languageEnglish
Pages (from-to)7741-7744
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume36
Issue number12 SUPPL. B
Publication statusPublished - Dec 1997
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

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