Abstract
Field emitter arrays made of single-crystal Si are fabricated by anodization and transfer techniques. The anodization of Si which has n/p junctions produces field emitter tips. The emitter tips are then transferred to another Si substrate by the direct bonding. It has been found that an optimum doping range exists for successful bonding and transfer of the emitter tips. Field emission characteristics of field emitter arrays thus fabricated are also reported.
| Original language | English |
|---|---|
| Pages (from-to) | 7741-7744 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes |
| Volume | 36 |
| Issue number | 12 SUPPL. B |
| Publication status | Published - Dec 1997 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Engineering(all)