TY - GEN
T1 - SiC-CMP characteristics under high pressure gas atmospheres using manganese slurry
AU - Hasegawa, Tadashi
AU - Doi, Toshiro K.
AU - Kurokawa, Syuhei
AU - Ohnishi, Osamu
AU - Kawase, Yasuhiro
AU - Yamaguchi, Yasuhide
AU - Kishii, Sadahiro
PY - 2010/12/1
Y1 - 2010/12/1
N2 - The objective of this research is to achieve high efficient and high quality CMP of SiC wafer using manganese oxide slurries. As a result, high removal rate was obtained with manganese dioxide (MnO2) abrasives especially in high pH region. Also the authors examined the influence of various gases around work pieces. Applying high pressure oxygen gas results in higher removal rate than that in normal atmospheric condition.
AB - The objective of this research is to achieve high efficient and high quality CMP of SiC wafer using manganese oxide slurries. As a result, high removal rate was obtained with manganese dioxide (MnO2) abrasives especially in high pH region. Also the authors examined the influence of various gases around work pieces. Applying high pressure oxygen gas results in higher removal rate than that in normal atmospheric condition.
UR - http://www.scopus.com/inward/record.url?scp=79957640792&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79957640792&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:79957640792
SN - 9781617822810
T3 - Advanced Metallization Conference (AMC)
SP - 161
EP - 162
BT - Advanced Metallization Conference 2010
T2 - Advanced Metallization Conference 2010
Y2 - 5 October 2010 through 7 October 2010
ER -