SiC-CMP characteristics under high pressure gas atmospheres using manganese slurry

Tadashi Hasegawa, Toshiro K. Doi, Syuhei Kurokawa, Osamu Ohnishi, Yasuhiro Kawase, Yasuhide Yamaguchi, Sadahiro Kishii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The objective of this research is to achieve high efficient and high quality CMP of SiC wafer using manganese oxide slurries. As a result, high removal rate was obtained with manganese dioxide (MnO2) abrasives especially in high pH region. Also the authors examined the influence of various gases around work pieces. Applying high pressure oxygen gas results in higher removal rate than that in normal atmospheric condition.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2010
Pages161-162
Number of pages2
Publication statusPublished - Dec 1 2010
EventAdvanced Metallization Conference 2010 - Albany, NY, United States
Duration: Oct 5 2010Oct 7 2010

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766

Other

OtherAdvanced Metallization Conference 2010
CountryUnited States
CityAlbany, NY
Period10/5/1010/7/10

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Industrial and Manufacturing Engineering

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  • Cite this

    Hasegawa, T., Doi, T. K., Kurokawa, S., Ohnishi, O., Kawase, Y., Yamaguchi, Y., & Kishii, S. (2010). SiC-CMP characteristics under high pressure gas atmospheres using manganese slurry. In Advanced Metallization Conference 2010 (pp. 161-162). (Advanced Metallization Conference (AMC)).