SiC single crystal growth rate measurement by in-situ observation using the transmission X-ray technique

Naoki Oyanagi; Shinichi Nishizawa; Tomohisa Kato; Hirotaka Yamaguchi; Kazuo Arai

SiC single crystal growth rate measurement by in-situ observation using the transmission X-ray technique

Naoki Oyanagi, Shinichi Nishizawa, Tomohisa Kato, Hirotaka Yamaguchi, Kazuo Arai

Research output: Contribution to journal › Conference article › peer-review

Abstract

The growth rate of SiC bulk single crystal by sublimation was measured in real time by using the transmission X-ray technique. The growth rate obtained by transmission X-ray intensity corresponds to the growth rate measured by nitrogen marker. The growth rate increases as the growth temperature increases and as pressure decreases. While taking into account the pressure balance between the surrounding pressure and vapor pressures of seed and source, the growth rate can be calculated by mass flux from source to seed.

Original language	English
Journal	Materials Science Forum
Volume	338
Publication status	Published - Jan 1 2000
Externally published	Yes
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "SiC single crystal growth rate measurement by in-situ observation using the transmission X-ray technique",

abstract = "The growth rate of SiC bulk single crystal by sublimation was measured in real time by using the transmission X-ray technique. The growth rate obtained by transmission X-ray intensity corresponds to the growth rate measured by nitrogen marker. The growth rate increases as the growth temperature increases and as pressure decreases. While taking into account the pressure balance between the surrounding pressure and vapor pressures of seed and source, the growth rate can be calculated by mass flux from source to seed.",

author = "Naoki Oyanagi and Shinichi Nishizawa and Tomohisa Kato and Hirotaka Yamaguchi and Kazuo Arai",

year = "2000",

month = jan,

day = "1",

language = "English",

volume = "338",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

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TY - JOUR

T1 - SiC single crystal growth rate measurement by in-situ observation using the transmission X-ray technique

AU - Oyanagi, Naoki

AU - Nishizawa, Shinichi

AU - Kato, Tomohisa

AU - Yamaguchi, Hirotaka

AU - Arai, Kazuo

PY - 2000/1/1

Y1 - 2000/1/1

N2 - The growth rate of SiC bulk single crystal by sublimation was measured in real time by using the transmission X-ray technique. The growth rate obtained by transmission X-ray intensity corresponds to the growth rate measured by nitrogen marker. The growth rate increases as the growth temperature increases and as pressure decreases. While taking into account the pressure balance between the surrounding pressure and vapor pressures of seed and source, the growth rate can be calculated by mass flux from source to seed.

AB - The growth rate of SiC bulk single crystal by sublimation was measured in real time by using the transmission X-ray technique. The growth rate obtained by transmission X-ray intensity corresponds to the growth rate measured by nitrogen marker. The growth rate increases as the growth temperature increases and as pressure decreases. While taking into account the pressure balance between the surrounding pressure and vapor pressures of seed and source, the growth rate can be calculated by mass flux from source to seed.

UR - http://www.scopus.com/inward/record.url?scp=12944335308&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12944335308&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:12944335308

SN - 0255-5476

VL - 338

JO - Materials Science Forum

JF - Materials Science Forum

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

SiC single crystal growth rate measurement by in-situ observation using the transmission X-ray technique

Abstract

All Science Journal Classification (ASJC) codes

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