SiC single crystal growth rate measurement by in-situ observation using the transmission X-ray technique

Naoki Oyanagi, Shinichi Nishizawa, Tomohisa Kato, Hirotaka Yamaguchi, Kazuo Arai

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

The growth rate of SiC bulk single crystal by sublimation was measured in real time by using the transmission X-ray technique. The growth rate obtained by transmission X-ray intensity corresponds to the growth rate measured by nitrogen marker. The growth rate increases as the growth temperature increases and as pressure decreases. While taking into account the pressure balance between the surrounding pressure and vapor pressures of seed and source, the growth rate can be calculated by mass flux from source to seed.

Original languageEnglish
JournalMaterials Science Forum
Volume338
Publication statusPublished - Jan 1 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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