SiC surface nanostructures induced by self-ordering of nano-facets

Tanaka Satoru, H. Nakagawa, I. Suemune

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

On-axis and vicinal 4H- and 6H-SiC(0001) surfaces have been investigated using atomic force microscopy and cross-sectional high-resolution transmission electron microscopy. We observed one-dimensionally ordered SiC surface nanostructures, which were energetically induced by self-ordering of nano-facets on any surfaces, regardless of polytypes and vicinal angles, after gas etching at high temperature. Two facet planes were typically revealed; (0001) and high index (112̄n) that are formed by equilibrium surface phase separation. A (112̄n) surface may have a free energy minimum due to attractive step-step interactions.

Original languageEnglish
Pages (from-to)407-410
Number of pages4
JournalMaterials Science Forum
Volume457-460
Issue numberI
Publication statusPublished - 2004
Externally publishedYes

Fingerprint

flat surfaces
Nanostructures
High resolution transmission electron microscopy
Phase separation
Free energy
Etching
Atomic force microscopy
Gases
free energy
etching
atomic force microscopy
transmission electron microscopy
high resolution
gases
interactions
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

SiC surface nanostructures induced by self-ordering of nano-facets. / Satoru, Tanaka; Nakagawa, H.; Suemune, I.

In: Materials Science Forum, Vol. 457-460, No. I, 2004, p. 407-410.

Research output: Contribution to journalArticle

Satoru, T, Nakagawa, H & Suemune, I 2004, 'SiC surface nanostructures induced by self-ordering of nano-facets', Materials Science Forum, vol. 457-460, no. I, pp. 407-410.
Satoru, Tanaka ; Nakagawa, H. ; Suemune, I. / SiC surface nanostructures induced by self-ordering of nano-facets. In: Materials Science Forum. 2004 ; Vol. 457-460, No. I. pp. 407-410.
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