SiC surface nanostructures induced by self-ordering of nano-facets

S. Tanaka, H. Nakagawa, I. Suemune

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

On-axis and vicinal 4H- and 6H-SiC(0001) surfaces have been investigated using atomic force microscopy and cross-sectional high-resolution transmission electron microscopy. We observed one-dimensionally ordered SiC surface nanostructures, which were energetically induced by self-ordering of nano-facets on any surfaces, regardless of polytypes and vicinal angles, after gas etching at high temperature. Two facet planes were typically revealed; (0001) and high index (112̄n) that are formed by equilibrium surface phase separation. A (112̄n) surface may have a free energy minimum due to attractive step-step interactions.

Original languageEnglish
Pages (from-to)407-410
Number of pages4
JournalMaterials Science Forum
Volume457-460
Issue numberI
DOIs
Publication statusPublished - Jan 1 2004
Externally publishedYes
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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