SiC/Si-dots multilayer structures formed by supersonic free jets of CH 3SiH3 and Si3H8

Yoshifumi Ikoma, Ryota Ohtani, Nobuaki Matsui, Teruaki Motooka

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    6 Citations (Scopus)


    The formation of multilayer structures of SiC/Si-dots on Si(100) was investigated using supersonic free jet chemical vapor deposition. The depth profiles of the chemical shifts were examined using Ar+ sputtering at 4 kV. It was noted that the SiC film formed on Si-dots is thinner with respect to the Si substrate. It was suggested that the SiC/Si-dots structures could be fabricated using supersonic free jet CVD.

    Original languageEnglish
    Pages (from-to)2492-2495
    Number of pages4
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Issue number6
    Publication statusPublished - Nov 2003

    All Science Journal Classification (ASJC) codes

    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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