SiC/Si-dots multilayer structures formed by supersonic free jets of CH 3SiH3 and Si3H8

Yoshifumi Ikoma, Ryota Ohtani, Nobuaki Matsui, Teruaki Motooka

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)

    Abstract

    The formation of multilayer structures of SiC/Si-dots on Si(100) was investigated using supersonic free jet chemical vapor deposition. The depth profiles of the chemical shifts were examined using Ar+ sputtering at 4 kV. It was noted that the SiC film formed on Si-dots is thinner with respect to the Si substrate. It was suggested that the SiC/Si-dots structures could be fabricated using supersonic free jet CVD.

    Original languageEnglish
    Pages (from-to)2492-2495
    Number of pages4
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Volume21
    Issue number6
    Publication statusPublished - Nov 2003

    All Science Journal Classification (ASJC) codes

    • Condensed Matter Physics
    • Electrical and Electronic Engineering

    Fingerprint Dive into the research topics of 'SiC/Si-dots multilayer structures formed by supersonic free jets of CH <sub>3</sub>SiH<sub>3</sub> and Si<sub>3</sub>H<sub>8</sub>'. Together they form a unique fingerprint.

    Cite this