Abstract
A new type of trench gate IGBT (insulated gate bipolar transistor) which uses a SiGe layer for the collector is experimentally investigated. SiGe collectors with different Ge content are deposited by multiple cathode sputtering making low temperature processing possible. The change in turn-off characteristics with Ge content is also investigated. Results indicate that the use of a SiGe collector reduces the tail current at turn-off due to the reduced injection of holes to the n- drift region.
Original language | English |
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Pages (from-to) | 2006-2010 |
Number of pages | 5 |
Journal | Solid-State Electronics |
Volume | 49 |
Issue number | 12 |
DOIs | |
Publication status | Published - Dec 1 2005 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry