Abstract
A new type of trench gate IGBT (insulated gate bipolar transistor) which uses a SiGe layer for the collector is experimentally investigated. SiGe collectors with different Ge content are deposited by multiple cathode sputtering making low temperature processing possible. The change in turn-off characteristics with Ge content is also investigated. Results indicate that the use of a SiGe collector reduces the tail current at turn-off due to the reduced injection of holes to the n- drift region.
| Original language | English |
|---|---|
| Pages (from-to) | 2006-2010 |
| Number of pages | 5 |
| Journal | Solid-State Electronics |
| Volume | 49 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 1 2005 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering. / Kudoh, Tsugutomo; Asano, Tanemasa.
In: Solid-State Electronics, Vol. 49, No. 12, 01.12.2005, p. 2006-2010.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering
AU - Kudoh, Tsugutomo
AU - Asano, Tanemasa
PY - 2005/12/1
Y1 - 2005/12/1
N2 - A new type of trench gate IGBT (insulated gate bipolar transistor) which uses a SiGe layer for the collector is experimentally investigated. SiGe collectors with different Ge content are deposited by multiple cathode sputtering making low temperature processing possible. The change in turn-off characteristics with Ge content is also investigated. Results indicate that the use of a SiGe collector reduces the tail current at turn-off due to the reduced injection of holes to the n- drift region.
AB - A new type of trench gate IGBT (insulated gate bipolar transistor) which uses a SiGe layer for the collector is experimentally investigated. SiGe collectors with different Ge content are deposited by multiple cathode sputtering making low temperature processing possible. The change in turn-off characteristics with Ge content is also investigated. Results indicate that the use of a SiGe collector reduces the tail current at turn-off due to the reduced injection of holes to the n- drift region.
UR - http://www.scopus.com/inward/record.url?scp=28044446992&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=28044446992&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2005.10.004
DO - 10.1016/j.sse.2005.10.004
M3 - Article
AN - SCOPUS:28044446992
VL - 49
SP - 2006
EP - 2010
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 12
ER -