SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering

Tsugutomo Kudoh, Tanemasa Asano

Research output: Contribution to journalArticle

Abstract

A new type of trench gate IGBT (insulated gate bipolar transistor) which uses a SiGe layer for the collector is experimentally investigated. SiGe collectors with different Ge content are deposited by multiple cathode sputtering making low temperature processing possible. The change in turn-off characteristics with Ge content is also investigated. Results indicate that the use of a SiGe collector reduces the tail current at turn-off due to the reduced injection of holes to the n- drift region.

Original languageEnglish
Pages (from-to)2006-2010
Number of pages5
JournalSolid-State Electronics
Volume49
Issue number12
DOIs
Publication statusPublished - Dec 1 2005

Fingerprint

Insulated gate bipolar transistors (IGBT)
bipolar transistors
accumulators
Sputtering
Cathodes
sputtering
Processing
Temperature
cathodes
injection

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering. / Kudoh, Tsugutomo; Asano, Tanemasa.

In: Solid-State Electronics, Vol. 49, No. 12, 01.12.2005, p. 2006-2010.

Research output: Contribution to journalArticle

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