SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering

Tsugutomo Kudoh; Tanemasa Asano

doi:10.1016/j.sse.2005.10.004

SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering

Tsugutomo Kudoh, Tanemasa Asano

Integrated Electronic Systems

Research output: Contribution to journal › Article › peer-review

Abstract

A new type of trench gate IGBT (insulated gate bipolar transistor) which uses a SiGe layer for the collector is experimentally investigated. SiGe collectors with different Ge content are deposited by multiple cathode sputtering making low temperature processing possible. The change in turn-off characteristics with Ge content is also investigated. Results indicate that the use of a SiGe collector reduces the tail current at turn-off due to the reduced injection of holes to the n^- drift region.

Original language	English
Pages (from-to)	2006-2010
Number of pages	5
Journal	Solid-State Electronics
Volume	49
Issue number	12
DOIs	https://doi.org/10.1016/j.sse.2005.10.004
Publication status	Published - Dec 1 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2005.10.004

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title = "SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering",

abstract = "A new type of trench gate IGBT (insulated gate bipolar transistor) which uses a SiGe layer for the collector is experimentally investigated. SiGe collectors with different Ge content are deposited by multiple cathode sputtering making low temperature processing possible. The change in turn-off characteristics with Ge content is also investigated. Results indicate that the use of a SiGe collector reduces the tail current at turn-off due to the reduced injection of holes to the n- drift region.",

author = "Tsugutomo Kudoh and Tanemasa Asano",

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N2 - A new type of trench gate IGBT (insulated gate bipolar transistor) which uses a SiGe layer for the collector is experimentally investigated. SiGe collectors with different Ge content are deposited by multiple cathode sputtering making low temperature processing possible. The change in turn-off characteristics with Ge content is also investigated. Results indicate that the use of a SiGe collector reduces the tail current at turn-off due to the reduced injection of holes to the n- drift region.

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