S iG e ミキシング誘起溶融成長によるG OI(G e on Ins ulator)の形成: 人工単結晶への道

Translated title of the contribution: SiGe-mixing-triggered rapid-melting growth for Ge-on-insulator formation: A road to artificial crystal

Masanobu Miyao, Taizoh Sadoh, Kaoru Toko, Masashi Kurosawa

Research output: Contribution to journalReview article

Original languageJapanese
Article number5
Pages (from-to)410
Number of pages5
JournalOYOBUTURI
Volume81
Publication statusPublished - May 2012

Cite this

S iG e ミキシング誘起溶融成長によるG OI(G e on Ins ulator)の形成 : 人工単結晶への道. / Miyao, Masanobu; Sadoh, Taizoh; Toko, Kaoru; Kurosawa, Masashi.

In: OYOBUTURI, Vol. 81, 5, 05.2012, p. 410.

Research output: Contribution to journalReview article

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title = "S iG e ミキシング誘起溶融成長によるG OI(G e on Ins ulator)の形成: 人工単結晶への道",
author = "Masanobu Miyao and Taizoh Sadoh and Kaoru Toko and Masashi Kurosawa",
year = "2012",
month = "5",
language = "Japanese",
volume = "81",
pages = "410",
journal = "OYOBUTURI",

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TY - JOUR

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AU - Miyao, Masanobu

AU - Sadoh, Taizoh

AU - Toko, Kaoru

AU - Kurosawa, Masashi

PY - 2012/5

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M3 - 評論記事

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JO - OYOBUTURI

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