SiGeミキシング誘起溶融成長によるGOI (Ge on Insulator) の形成: 人工単結晶への道

Translated title of the contribution: SiGe-mixing-triggered rapid-melting growth for Ge-on-insulator formation: A road to artificial crystal

宮尾 正信, 佐道 泰造, 都甲 薫, 黒澤 昌志

Research output: Contribution to journalArticle

Abstract

<p>The development of high-quality Ge-on-insulator (GOI) structures is essential for making a breakthrough into the scaling limit of Si large-scale integrated circuits. In the present paper, we review a new GOI growth technique, i.e., the SiGe-mixing-triggered rapid-melting growth technique, which enables chip-sized and mesh-shaped GOI structures. In addition, the integration of GOI(111) on Si(100) substrates becomes possible by combining this method with the Si-microseeding technique. These progresses pave the way for the artificial single-crystal technology.</p>
Translated title of the contributionSiGe-mixing-triggered rapid-melting growth for Ge-on-insulator formation: A road to artificial crystal
Original languageJapanese
Pages (from-to)410-414
Number of pages5
Journal応用物理
Volume81
Issue number5
DOIs
Publication statusPublished - May 10 2012

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