SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator

Taizoh Sadoh, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We have investigated the Si-seeding rapid-melting process and demonstrated the formation of giant Ge stripes with (100), (110), and (111) orientations on Si (100), (110), and (111) substrates, respectively, covered with SiO 2 films. We revealed that crystallization is triggered by Si-Ge mixing in the seeding regions in this process. Based on this mechanism, we have proposed a novel technique to realize orientation-controlled Ge layers on transparent insulating substrates by using Si artificial micro-seeds with (100) and (111)-orientations. This achieved epitaxial growth of single crystalline (100) and (111)-oriented Ge stripes on quartz substrates. The Ge layers showed a high hole mobility exceeding 1100 cm2/Vs owing to the high crystallinity.

Original languageEnglish
Title of host publicationTechnology Evolution for Silicon Nano-Electronics
Pages8-13
Number of pages6
DOIs
Publication statusPublished - Mar 23 2011
EventInternational Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE - Tokyo, Japan
Duration: Jun 3 2010Jun 5 2010

Publication series

NameKey Engineering Materials
Volume470
ISSN (Print)1013-9826

Other

OtherInternational Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE
CountryJapan
CityTokyo
Period6/3/106/5/10

Fingerprint

Melting
Substrates
Quartz
Hole mobility
Crystallization
Epitaxial growth
Crystal orientation
Seed
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Sadoh, T., Toko, K., Kurosawa, M., Tanaka, T., Sakane, T., Ohta, Y., ... Miyao, M. (2011). SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator. In Technology Evolution for Silicon Nano-Electronics (pp. 8-13). (Key Engineering Materials; Vol. 470). https://doi.org/10.4028/www.scientific.net/KEM.470.8

SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator. / Sadoh, Taizoh; Toko, Kaoru; Kurosawa, Masashi; Tanaka, Takanori; Sakane, Takashi; Ohta, Yasuharu; Kawabata, Naoyuki; Yokoyama, Hiroyuki; Miyao, Masanobu.

Technology Evolution for Silicon Nano-Electronics. 2011. p. 8-13 (Key Engineering Materials; Vol. 470).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sadoh, T, Toko, K, Kurosawa, M, Tanaka, T, Sakane, T, Ohta, Y, Kawabata, N, Yokoyama, H & Miyao, M 2011, SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator. in Technology Evolution for Silicon Nano-Electronics. Key Engineering Materials, vol. 470, pp. 8-13, International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE, Tokyo, Japan, 6/3/10. https://doi.org/10.4028/www.scientific.net/KEM.470.8
Sadoh T, Toko K, Kurosawa M, Tanaka T, Sakane T, Ohta Y et al. SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator. In Technology Evolution for Silicon Nano-Electronics. 2011. p. 8-13. (Key Engineering Materials). https://doi.org/10.4028/www.scientific.net/KEM.470.8
Sadoh, Taizoh ; Toko, Kaoru ; Kurosawa, Masashi ; Tanaka, Takanori ; Sakane, Takashi ; Ohta, Yasuharu ; Kawabata, Naoyuki ; Yokoyama, Hiroyuki ; Miyao, Masanobu. / SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator. Technology Evolution for Silicon Nano-Electronics. 2011. pp. 8-13 (Key Engineering Materials).
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