SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator

Taizoh Sadoh, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We have investigated the Si-seeding rapid-melting process and demonstrated the formation of giant Ge stripes with (100), (110), and (111) orientations on Si (100), (110), and (111) substrates, respectively, covered with SiO 2 films. We revealed that crystallization is triggered by Si-Ge mixing in the seeding regions in this process. Based on this mechanism, we have proposed a novel technique to realize orientation-controlled Ge layers on transparent insulating substrates by using Si artificial micro-seeds with (100) and (111)-orientations. This achieved epitaxial growth of single crystalline (100) and (111)-oriented Ge stripes on quartz substrates. The Ge layers showed a high hole mobility exceeding 1100 cm2/Vs owing to the high crystallinity.

Original languageEnglish
Title of host publicationTechnology Evolution for Silicon Nano-Electronics
Pages8-13
Number of pages6
DOIs
Publication statusPublished - Mar 23 2011
EventInternational Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE - Tokyo, Japan
Duration: Jun 3 2010Jun 5 2010

Publication series

NameKey Engineering Materials
Volume470
ISSN (Print)1013-9826

Other

OtherInternational Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE
CountryJapan
CityTokyo
Period6/3/106/5/10

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator'. Together they form a unique fingerprint.

  • Cite this

    Sadoh, T., Toko, K., Kurosawa, M., Tanaka, T., Sakane, T., Ohta, Y., Kawabata, N., Yokoyama, H., & Miyao, M. (2011). SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator. In Technology Evolution for Silicon Nano-Electronics (pp. 8-13). (Key Engineering Materials; Vol. 470). https://doi.org/10.4028/www.scientific.net/KEM.470.8