Significance of kinetic-linkage of oxygen vacancy with SiO2/Si interface for SiO2-IL scavenging in HfO2 gate stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work clarifies roles of substrate-Si in SiO2-IL scavenging in HfO2/SiO2/Si gate stack experimentally, and points out a coupling effect of oxygen vacancy (VO) with SiO2/Si interface from thermodynamic viewpoint.

Original languageEnglish
Title of host publication2015 Silicon Nanoelectronics Workshop, SNW 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863485389
Publication statusPublished - Sep 24 2015
Externally publishedYes
EventSilicon Nanoelectronics Workshop, SNW 2015 - Kyoto, Japan
Duration: Jun 14 2015Jun 15 2015

Publication series

Name2015 Silicon Nanoelectronics Workshop, SNW 2015

Conference

ConferenceSilicon Nanoelectronics Workshop, SNW 2015
Country/TerritoryJapan
CityKyoto
Period6/14/156/15/15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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