Significant improvement of device durability in organic light-emitting diodes by doping both hole transport and emitter layers with rubrene molecules

Gosuke Sakamoto; Chihaya Adachi; Toshiki Koyama; Yoshio Taniguchi; Charles D. Merritt; Hideyuki Murata; Zakya H. Kafafi

doi:10.1063/1.124506

Significant improvement of device durability in organic light-emitting diodes by doping both hole transport and emitter layers with rubrene molecules

Gosuke Sakamoto, Chihaya Adachi, Toshiki Koyama, Yoshio Taniguchi, Charles D. Merritt, Hideyuki Murata, Zakya H. Kafafi

Research output: Contribution to journal › Article › peer-review

91 Citations (Scopus)

Abstract

Highly durable organic light emitting diodes (OLEDs) were developed by extending the doping sites. The doping sites include the doping of both hole transport layer (HTL) and emitting layer (EML). To develop these devices further, a wide variety of host and dopant materials and their combination should be examined, while the detailed mechanism of the doping that results in the enhancement in device durability should be clarified.

Original language	English
Pages (from-to)	766-768
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	6
DOIs	https://doi.org/10.1063/1.124506
Publication status	Published - Aug 9 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.124506

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abstract = "Highly durable organic light emitting diodes (OLEDs) were developed by extending the doping sites. The doping sites include the doping of both hole transport layer (HTL) and emitting layer (EML). To develop these devices further, a wide variety of host and dopant materials and their combination should be examined, while the detailed mechanism of the doping that results in the enhancement in device durability should be clarified.",

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AU - Adachi, Chihaya

AU - Koyama, Toshiki

AU - Taniguchi, Yoshio

AU - Merritt, Charles D.

AU - Murata, Hideyuki

AU - Kafafi, Zakya H.

PY - 1999/8/9

Y1 - 1999/8/9

N2 - Highly durable organic light emitting diodes (OLEDs) were developed by extending the doping sites. The doping sites include the doping of both hole transport layer (HTL) and emitting layer (EML). To develop these devices further, a wide variety of host and dopant materials and their combination should be examined, while the detailed mechanism of the doping that results in the enhancement in device durability should be clarified.

AB - Highly durable organic light emitting diodes (OLEDs) were developed by extending the doping sites. The doping sites include the doping of both hole transport layer (HTL) and emitting layer (EML). To develop these devices further, a wide variety of host and dopant materials and their combination should be examined, while the detailed mechanism of the doping that results in the enhancement in device durability should be clarified.

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Significant improvement of device durability in organic light-emitting diodes by doping both hole transport and emitter layers with rubrene molecules

Abstract

All Science Journal Classification (ASJC) codes

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