Significant improvement of SiO 24H-SiC interface properties by electron cyclotron resonance nitrogen plasma irradiation

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    The effect of the insertion of a SiN film on the SiO 24H-SiC interface properties was studied. The SiN interlayer was grown using electron cyclotron resonance (ECR) nitrogen plasma irradiation prior to the SiO 2 deposition. It was found that the insertion of a SiN interlayer led to a significant decrease in interface-state and fixed-charge densities in a SiO 24H-SiC gate stack. This insertion also induced elimination of the near-interface traps in the oxide. It was clarified from X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry analyses that Si dangling bonds were terminated by nitrogen, and the SiN interlayer effectively suppressed the formation of carbon generated by the thermal reaction between SiC and O atoms.

    Original languageEnglish
    JournalJournal of the Electrochemical Society
    Volume159
    Issue number1
    DOIs
    Publication statusPublished - Feb 29 2012

    Fingerprint

    Nitrogen plasma
    Dangling bonds
    Electron cyclotron resonance
    nitrogen plasma
    Interface states
    Secondary ion mass spectrometry
    electron cyclotron resonance
    Charge density
    Oxides
    insertion
    interlayers
    Nitrogen
    Carbon
    X ray photoelectron spectroscopy
    Irradiation
    Atoms
    irradiation
    secondary ion mass spectrometry
    elimination
    traps

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Renewable Energy, Sustainability and the Environment
    • Condensed Matter Physics
    • Surfaces, Coatings and Films
    • Materials Chemistry
    • Electrochemistry

    Cite this

    @article{df0c33a84ca5489f8352fbb7b9a3bc8d,
    title = "Significant improvement of SiO 24H-SiC interface properties by electron cyclotron resonance nitrogen plasma irradiation",
    abstract = "The effect of the insertion of a SiN film on the SiO 24H-SiC interface properties was studied. The SiN interlayer was grown using electron cyclotron resonance (ECR) nitrogen plasma irradiation prior to the SiO 2 deposition. It was found that the insertion of a SiN interlayer led to a significant decrease in interface-state and fixed-charge densities in a SiO 24H-SiC gate stack. This insertion also induced elimination of the near-interface traps in the oxide. It was clarified from X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry analyses that Si dangling bonds were terminated by nitrogen, and the SiN interlayer effectively suppressed the formation of carbon generated by the thermal reaction between SiC and O atoms.",
    author = "Haigui Yang and Dong Wang and Hiroshi Nakashima",
    year = "2012",
    month = "2",
    day = "29",
    doi = "10.1149/2.003201jes",
    language = "English",
    volume = "159",
    journal = "Journal of the Electrochemical Society",
    issn = "0013-4651",
    publisher = "Electrochemical Society, Inc.",
    number = "1",

    }

    TY - JOUR

    T1 - Significant improvement of SiO 24H-SiC interface properties by electron cyclotron resonance nitrogen plasma irradiation

    AU - Yang, Haigui

    AU - Wang, Dong

    AU - Nakashima, Hiroshi

    PY - 2012/2/29

    Y1 - 2012/2/29

    N2 - The effect of the insertion of a SiN film on the SiO 24H-SiC interface properties was studied. The SiN interlayer was grown using electron cyclotron resonance (ECR) nitrogen plasma irradiation prior to the SiO 2 deposition. It was found that the insertion of a SiN interlayer led to a significant decrease in interface-state and fixed-charge densities in a SiO 24H-SiC gate stack. This insertion also induced elimination of the near-interface traps in the oxide. It was clarified from X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry analyses that Si dangling bonds were terminated by nitrogen, and the SiN interlayer effectively suppressed the formation of carbon generated by the thermal reaction between SiC and O atoms.

    AB - The effect of the insertion of a SiN film on the SiO 24H-SiC interface properties was studied. The SiN interlayer was grown using electron cyclotron resonance (ECR) nitrogen plasma irradiation prior to the SiO 2 deposition. It was found that the insertion of a SiN interlayer led to a significant decrease in interface-state and fixed-charge densities in a SiO 24H-SiC gate stack. This insertion also induced elimination of the near-interface traps in the oxide. It was clarified from X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry analyses that Si dangling bonds were terminated by nitrogen, and the SiN interlayer effectively suppressed the formation of carbon generated by the thermal reaction between SiC and O atoms.

    UR - http://www.scopus.com/inward/record.url?scp=84863153641&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84863153641&partnerID=8YFLogxK

    U2 - 10.1149/2.003201jes

    DO - 10.1149/2.003201jes

    M3 - Article

    AN - SCOPUS:84863153641

    VL - 159

    JO - Journal of the Electrochemical Society

    JF - Journal of the Electrochemical Society

    SN - 0013-4651

    IS - 1

    ER -