Significant improvement of SiO 24H-SiC interface properties by electron cyclotron resonance nitrogen plasma irradiation

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    Abstract

    The effect of the insertion of a SiN film on the SiO 24H-SiC interface properties was studied. The SiN interlayer was grown using electron cyclotron resonance (ECR) nitrogen plasma irradiation prior to the SiO 2 deposition. It was found that the insertion of a SiN interlayer led to a significant decrease in interface-state and fixed-charge densities in a SiO 24H-SiC gate stack. This insertion also induced elimination of the near-interface traps in the oxide. It was clarified from X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry analyses that Si dangling bonds were terminated by nitrogen, and the SiN interlayer effectively suppressed the formation of carbon generated by the thermal reaction between SiC and O atoms.

    Original languageEnglish
    Pages (from-to)H1-H4
    JournalJournal of the Electrochemical Society
    Volume159
    Issue number1
    DOIs
    Publication statusPublished - 2012

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Renewable Energy, Sustainability and the Environment
    • Surfaces, Coatings and Films
    • Electrochemistry
    • Materials Chemistry

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