Significant Propagation Loss Reduction on Silicon High-Mesa Waveguides Using Thermal Oxidation Technique

Yu Han, Wenying Li, Haisong Jiang, Kiichi Hamamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have exploited thermal oxidation technique to silicon high-mesa waveguides for sensing-application. Significant propagation loss reduction from 1.45 to 0.84 dB/cm at a waveguide width of 500 nm has been achieved by the technique successfully.

Original languageEnglish
Title of host publicationOECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784885523212
DOIs
Publication statusPublished - Jul 2019
Event24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019 - Fukuoka, Japan
Duration: Jul 7 2019Jul 11 2019

Publication series

NameOECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019

Conference

Conference24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019
CountryJapan
CityFukuoka
Period7/7/197/11/19

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Signal Processing
  • Electrical and Electronic Engineering
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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    Han, Y., Li, W., Jiang, H., & Hamamoto, K. (2019). Significant Propagation Loss Reduction on Silicon High-Mesa Waveguides Using Thermal Oxidation Technique. In OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019 [8817854] (OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/PS.2019.8817854