Silicon (110) grid for ion beam processing systems

R. Sawada, E. Higurashi, F. Shimokawa, O. Ohguchi, A. Tago

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1 Citation (Scopus)

Abstract

Grids fabricated by anisotropically etching (110) silicon have been investigated for use in extracting and accelerating ions through their apertures. The silicon grids provide stable ion beams, resulting in a life span that is five times that of conventional stainless-steel grids of the same grid thickness, and large thickness for the same open areas. The silicon grids also have a big advantage because they do not experience the substantial plastic deformation that stainless-steel grids do. In addition, they provide a density of ions a few times higher than conventional carbon grids, although their life span is shorter. Moreover, they can protect samples from being contaminated by impurities such as heavy metals contained in stainless steel. Therefore, silicon grids are suitable for fabricating optical elements, such as microlenses and optical films in optical microelectromechanical systems.

Original languageEnglish
Pages (from-to)561-566
Number of pages6
JournalJournal of Micromechanics and Microengineering
Volume11
Issue number5
DOIs
Publication statusPublished - Sep 1 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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    Sawada, R., Higurashi, E., Shimokawa, F., Ohguchi, O., & Tago, A. (2001). Silicon (110) grid for ion beam processing systems. Journal of Micromechanics and Microengineering, 11(5), 561-566. https://doi.org/10.1088/0960-1317/11/5/318