Silicon carbide bulk crystal growth modeling from atomic scale to reactor scale

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The state of the art of silicon carbide crystal growth modeling is explained from the two aspects. One is the technical problems of SiC bulk single crystal growth process by sublimation method. Numerical modeling can contribute on the reactor design and process condition optimization. Then the shape of SiC grown crystal (diameter and length) can be controlled by modifying the growth crucible design. Second one is the theoretical problem of SiC polytype control. By calculating the bulk crystal energy of each polytype, and surface energy of each possible surface during growth, it is pointed out that growin surface energy has effects on the polytype stability of SiC crystals.

Original languageEnglish
Title of host publicationGallium Nitride and Silicon Carbide Power Technologies 2
PublisherElectrochemical Society Inc.
Pages119-126
Number of pages8
Edition3
ISBN (Print)9781607683513
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting - Honolulu, HI, United States
Duration: Oct 7 2012Oct 12 2012

Publication series

NameECS Transactions
Number3
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting
Country/TerritoryUnited States
CityHonolulu, HI
Period10/7/1210/12/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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