Silicon carbide epitaxial layer growths on Acheson seed crystals from silicon melt

M. Nasir Khan, Shin ichi Nishizawa, Tomohisa Kato, Ryoji Kosugi, Kazuo Arai

Research output: Contribution to journalArticlepeer-review

Abstract

Silicon carbide epitaxial layer growth was carried out on both Si- and C-faces of the 6H-SiC Acheson seed crystals by a technique similar to that used for the sublimation growth of bulk single crystals of this material. High-resolution XRD (HRXRD) measurements showed the single crystalline structure for these grown layers. RHEED patterns confirmed that the grown layers are of single crystalline nature having (n×n) surface reconstruction. Raman spectroscopy showed the same polytype for the grown layers as that of the seed crystals. Atomic force and optical microscopy revealed smooth, uniform and mirror like surfaces for the grown layers. Step flow growth mechanism was observed on both Si- and C-faces of the seed crystal. The grown layers show similar characteristic features as that observed for the SiC layers grown by other techniques such as liquid phase epitaxy (LPE) and chemical vapor deposition (CVD). The technique used is a simple, viable and new alternative for growing SiC epitaxial layers.

Original languageEnglish
Pages (from-to)307-314
Number of pages8
JournalMaterials Letters
Volume57
Issue number2
DOIs
Publication statusPublished - Dec 1 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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