Silicon carbide growth: C/Si ratio evaluation and modeling

Michel Pons; Shin Ichi Nishizawa; Peter Wellmann; E. Blanquet; D. Chaussende; J. M. Dedulle; R. Madar

Silicon carbide growth: C/Si ratio evaluation and modeling

Michel Pons, Shin Ichi Nishizawa, Peter Wellmann, E. Blanquet, D. Chaussende, J. M. Dedulle, R. Madar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD), are sufficiently mature to help building new process equipment or up-scaling old ones. It is possible (i) to simulate accurately temperature and deposition distributions, as well as doping (ii) to quantify the limiting phenomena, (iii) to understand the important role of different precursors in CVD and hydrogen additions in PVT. The first conclusion of this paper is the importance of the "effective" C/Si ratio during CVD epitaxy in hot-wall reactors and its capability to explain the doping concentrations. The second conclusion is the influence of the C/Si ratio in alternative bulk growth technique involving gas additions.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2007
Editors	Takashi Fuyuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Akira Suzuki
Publisher	Trans Tech Publications Ltd
Pages	83-88
Number of pages	6
ISBN (Print)	9780878493579
Publication status	Published - Jan 1 2009
Externally published	Yes
Event	12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan Duration: Oct 14 2007 → Oct 19 2007

Publication series

Name	Materials Science Forum
Volume	600-603
ISSN (Print)	0255-5476

Other

Other	12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
Country/Territory	Japan
City	Otsu
Period	10/14/07 → 10/19/07

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Pons, M., Nishizawa, S. I., Wellmann, P., Blanquet, E., Chaussende, D., Dedulle, J. M., & Madar, R. (2009). Silicon carbide growth: C/Si ratio evaluation and modeling. In T. Fuyuki, H. Okumura, K. Fukuda, S. Nishizawa, T. Kimoto, & A. Suzuki (Eds.), Silicon Carbide and Related Materials 2007 (pp. 83-88). (Materials Science Forum; Vol. 600-603). Trans Tech Publications Ltd.

Silicon carbide growth: C/Si ratio evaluation and modeling. / Pons, Michel; Nishizawa, Shin Ichi; Wellmann, Peter et al.
Silicon Carbide and Related Materials 2007. ed. / Takashi Fuyuki; Hajime Okumura; Kenji Fukuda; Shin-ichi Nishizawa; Tsunenobu Kimoto; Akira Suzuki. Trans Tech Publications Ltd, 2009. p. 83-88 (Materials Science Forum; Vol. 600-603).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Pons, M, Nishizawa, SI, Wellmann, P, Blanquet, E, Chaussende, D, Dedulle, JM & Madar, R 2009, Silicon carbide growth: C/Si ratio evaluation and modeling. in T Fuyuki, H Okumura, K Fukuda, S Nishizawa, T Kimoto & A Suzuki (eds), Silicon Carbide and Related Materials 2007. Materials Science Forum, vol. 600-603, Trans Tech Publications Ltd, pp. 83-88, 12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007, Otsu, Japan, 10/14/07.

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T2 - 12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007

AU - Pons, Michel

AU - Nishizawa, Shin Ichi

AU - Wellmann, Peter

AU - Blanquet, E.

AU - Chaussende, D.

AU - Dedulle, J. M.

AU - Madar, R.

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N2 - Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD), are sufficiently mature to help building new process equipment or up-scaling old ones. It is possible (i) to simulate accurately temperature and deposition distributions, as well as doping (ii) to quantify the limiting phenomena, (iii) to understand the important role of different precursors in CVD and hydrogen additions in PVT. The first conclusion of this paper is the importance of the "effective" C/Si ratio during CVD epitaxy in hot-wall reactors and its capability to explain the doping concentrations. The second conclusion is the influence of the C/Si ratio in alternative bulk growth technique involving gas additions.

AB - Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD), are sufficiently mature to help building new process equipment or up-scaling old ones. It is possible (i) to simulate accurately temperature and deposition distributions, as well as doping (ii) to quantify the limiting phenomena, (iii) to understand the important role of different precursors in CVD and hydrogen additions in PVT. The first conclusion of this paper is the importance of the "effective" C/Si ratio during CVD epitaxy in hot-wall reactors and its capability to explain the doping concentrations. The second conclusion is the influence of the C/Si ratio in alternative bulk growth technique involving gas additions.

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A2 - Fuyuki, Takashi

A2 - Okumura, Hajime

A2 - Fukuda, Kenji

A2 - Nishizawa, Shin-ichi

A2 - Kimoto, Tsunenobu

A2 - Suzuki, Akira

PB - Trans Tech Publications Ltd

Y2 - 14 October 2007 through 19 October 2007

ER -

Silicon carbide growth: C/Si ratio evaluation and modeling

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