Silicon carbide growth: C/Si ratio evaluation and modeling

Michel Pons, Shin Ichi Nishizawa, Peter Wellmann, E. Blanquet, D. Chaussende, J. M. Dedulle, R. Madar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD), are sufficiently mature to help building new process equipment or up-scaling old ones. It is possible (i) to simulate accurately temperature and deposition distributions, as well as doping (ii) to quantify the limiting phenomena, (iii) to understand the important role of different precursors in CVD and hydrogen additions in PVT. The first conclusion of this paper is the importance of the "effective" C/Si ratio during CVD epitaxy in hot-wall reactors and its capability to explain the doping concentrations. The second conclusion is the influence of the C/Si ratio in alternative bulk growth technique involving gas additions.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsTakashi Fuyuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Akira Suzuki
PublisherTrans Tech Publications Ltd
Pages83-88
Number of pages6
ISBN (Print)9780878493579
Publication statusPublished - Jan 1 2009
Externally publishedYes
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: Oct 14 2007Oct 19 2007

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476

Other

Other12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period10/14/0710/19/07

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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