Silicon carbide growth: C/Si ratio evaluation and modeling

Michel Pons, Shinichi Nishizawa, Peter Wellmann, Elisabeth Blanquet, Didier Chaussende, Jean Marc Dedulle

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD) and hybrid techniques, are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible (i) to simulate accurately temperature and deposition distributions, as well as doping (ii) to quantify the limiting phenomena, (iii) to understand the important role of different precursors in CVD and hydrogen additions in PVT. The first conclusion of this paper is the importance of the "effective" C/Si ratio during CVD epitaxy in hot-wall reactors and its capability to explain the doping concentrations. The second conclusion is the influence of the C/Si ratio in alternative bulk growth technique involving gas additions. Preliminary results show that fine tuning of H2 or precursor additions allow a better control of concentrations of residual and intentional doping.

Original languageEnglish
Title of host publicationSilicon Carbide 2006 - Materials, Processing and Devices
Pages67-78
Number of pages12
Volume911
Publication statusPublished - Oct 31 2006
Externally publishedYes
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 18 2006Apr 20 2006

Other

Other2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/18/064/20/06

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Pons, M., Nishizawa, S., Wellmann, P., Blanquet, E., Chaussende, D., & Dedulle, J. M. (2006). Silicon carbide growth: C/Si ratio evaluation and modeling. In Silicon Carbide 2006 - Materials, Processing and Devices (Vol. 911, pp. 67-78)