Silicon crystal growth from the melt: Analysis from atomic and macro scales

K. Kakimoto, L. Liu, T. Kitashima, A. Murakawa, Y. Hashimoto

Research output: Contribution to journalArticle

Abstract

The effect of impurity concentration on thermal conductivity of natural and isotope silicon by using equilibrium molecular dynamics simulation is investigated. It was found that the concentrations of the impurities such as boron, phosphor and arsene play an important role in the propagation of phonons in silicon crystals. It was also clarified that a mass difference of impurities and host crystals results in degradation of thermal conductivity of silicon.

Original languageEnglish
Pages (from-to)307-312
Number of pages6
JournalCrystal Research and Technology
Volume40
Issue number4-5
DOIs
Publication statusPublished - Apr 1 2005

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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