TY - JOUR
T1 - Silicon crystal growth from the melt
T2 - Analysis from atomic and macro scales
AU - Kakimoto, K.
AU - Liu, L.
AU - Kitashima, T.
AU - Murakawa, A.
AU - Hashimoto, Y.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005/4
Y1 - 2005/4
N2 - The effect of impurity concentration on thermal conductivity of natural and isotope silicon by using equilibrium molecular dynamics simulation is investigated. It was found that the concentrations of the impurities such as boron, phosphor and arsene play an important role in the propagation of phonons in silicon crystals. It was also clarified that a mass difference of impurities and host crystals results in degradation of thermal conductivity of silicon.
AB - The effect of impurity concentration on thermal conductivity of natural and isotope silicon by using equilibrium molecular dynamics simulation is investigated. It was found that the concentrations of the impurities such as boron, phosphor and arsene play an important role in the propagation of phonons in silicon crystals. It was also clarified that a mass difference of impurities and host crystals results in degradation of thermal conductivity of silicon.
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U2 - 10.1002/crat.200410343
DO - 10.1002/crat.200410343
M3 - Article
AN - SCOPUS:25444521782
SN - 0232-1300
VL - 40
SP - 307
EP - 312
JO - Crystal Research and Technology
JF - Crystal Research and Technology
IS - 4-5
ER -