Silicon crystal nanowires produced by metal-induced lateral crystallization

Gou Nakagawa, Tanemasa Asano

Research output: Contribution to journalArticle

Abstract

New findings on the growth of Si crystal nanowires by metal-induced lateral crystallization (MILCusing Ni as a catalyst are described. MILC grains are formed as a result of the growth of Si crystal nanowires due to the migration of NiSi2 precipitates, which are located at the crystallization front, along the (111direction. To investigate the behavior of Si nanowires in detail, we carried out Ni-MILC of an amorphous Si (a-Sifilm patterned by photolithography or UV nanoimprint lithography (UV-NIL). By limiting the growth area, the flexible growth of Si crystal nanowires was found to appear, and the grain-filtering of MILC crystals was also found to be possible by decreasing pattern width. On the other hand, in the case of Ni-MILC of a-Si narrow wires prepared by UV-NIL, MILC growth length reduced with decreasing a-Si wire width. However, Ni-MILC crystals could grow even in a region as narrow as 150 nm wide, which is almost the same as the width of Si crystal nanowires produced by Ni-MILC.

Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume48
Issue number6 PART 2
DOIs
Publication statusPublished - Jun 2009

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this