Silicon fine structure formation on sapphire with Focused Ion Beam

D. J. Bai, Y. Q. Zhang, A. Matsushita, A. Baba, A. Kenjo, Taizoh Sadoh, Hiroshi Nakashima, H. Mori, T. Tsurushima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A Tetra-Methyl-Ammonium-Hydroxide (TMAH) aqueous solution etches crystalline silicon without removing the damaged silicon and sapphire. Crystalline silicon films with 600 nm thickness on sapphire were irradiated with Si 2+ Focused-Ion-Beams (FIB), and amorphous fine patterns were formed on the surfaces of the silicon films. Crystalline silicon regions were selectively etched off with the TMAH solution without removing the amorphous patterns acting as the etching mask, and silicon fine structures with the maximum feature size of 800 nm were formed. The feature size depends on the film thickness and can be optimized by the FIB irradiation and etching conditions. The technique is expected to be utilized in the nano-electronic device processing.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
PublisherIEEE
Pages1101-1104
Number of pages4
ISBN (Print)078034538X
Publication statusPublished - Dec 1 1999
EventProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) - Kyoto, Jpn
Duration: Jun 22 1998Jun 26 1998

Publication series

NameProceedings of the International Conference on Ion Implantation Technology
Volume2

Other

OtherProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)
CityKyoto, Jpn
Period6/22/986/26/98

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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