Silicon-on-Insulator Fundamental to First-Order Dual Polarization Mode Converter based on Si-Si3N4 Phase Plate Waveguide

Basma E. Abu-Elmaaty, Mohammed S. Sayed, Hossam M.H. Shalaby, Ramesh Pokharel, Anand Srivastava

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A silicon-on-insulator fundamental to first-order mode converter with both polarization capability is proposed. The device is based on ditching half-width of propagating silicon waveguide with a silicon nitride substrip of length 0.8 μm. The proposed device has a very simple structure, a low insertion loss of -1.5dB, and a low crosstalk of -12.81 dB at a wavelength of 1550nm for transverse electric (TE) polarization.

Original languageEnglish
Title of host publication2018 20th International Conference on Transparent Optical Networks, ICTON 2018
PublisherIEEE Computer Society
ISBN (Electronic)9781538666043
DOIs
Publication statusPublished - Sep 26 2018
Event20th International Conference on Transparent Optical Networks, ICTON 2018 - Bucharest, Romania
Duration: Jul 1 2018Jul 5 2018

Publication series

NameInternational Conference on Transparent Optical Networks
Volume2018-July
ISSN (Electronic)2162-7339

Other

Other20th International Conference on Transparent Optical Networks, ICTON 2018
CountryRomania
CityBucharest
Period7/1/187/5/18

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Abu-Elmaaty, B. E., Sayed, M. S., Shalaby, H. M. H., Pokharel, R., & Srivastava, A. (2018). Silicon-on-Insulator Fundamental to First-Order Dual Polarization Mode Converter based on Si-Si3N4 Phase Plate Waveguide. In 2018 20th International Conference on Transparent Optical Networks, ICTON 2018 [8473997] (International Conference on Transparent Optical Networks; Vol. 2018-July). IEEE Computer Society. https://doi.org/10.1109/ICTON.2018.8473997