Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding

Linghan Li, Akio Higo, Ryo Takigawa, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode was developed and realized by silicon MEMS process and plasma assisted direct bonding. The InGaAsP Multiple Quantum Well (MQW) was integrated onto a SOI platform with highly doped micro rib by O2/Ar plasma assisted bonding which greatly improves the electrical property between the heterointerface. The photon-electron conversion of the photodiode was successfully demonstrated. The waveguide photodiode shows around 50% quantum efficiency at 1550nm and TE polarization.

Original languageEnglish
Title of host publication2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages2502-2505
Number of pages4
DOIs
Publication statusPublished - Sep 1 2011
Externally publishedYes
Event2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China
Duration: Jun 5 2011Jun 9 2011

Publication series

Name2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Other

Other2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
CountryChina
CityBeijing
Period6/5/116/9/11

Fingerprint

Photodiodes
Waveguides
Silicon
Plasmas
Quantum efficiency
Semiconductor quantum wells
MEMS
Electric properties
Photons
Polarization
Electrons

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Li, L., Higo, A., Takigawa, R., Higurashi, E., Sugiyama, M., & Nakano, Y. (2011). Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (pp. 2502-2505). [5969752] (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). https://doi.org/10.1109/TRANSDUCERS.2011.5969752

Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding. / Li, Linghan; Higo, Akio; Takigawa, Ryo; Higurashi, Eiji; Sugiyama, Masakazu; Nakano, Yoshiaki.

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 2502-2505 5969752 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Li, L, Higo, A, Takigawa, R, Higurashi, E, Sugiyama, M & Nakano, Y 2011, Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding. in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969752, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, pp. 2502-2505, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, Beijing, China, 6/5/11. https://doi.org/10.1109/TRANSDUCERS.2011.5969752
Li L, Higo A, Takigawa R, Higurashi E, Sugiyama M, Nakano Y. Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 2502-2505. 5969752. (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). https://doi.org/10.1109/TRANSDUCERS.2011.5969752
Li, Linghan ; Higo, Akio ; Takigawa, Ryo ; Higurashi, Eiji ; Sugiyama, Masakazu ; Nakano, Yoshiaki. / Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding. 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. pp. 2502-2505 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).
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