Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si

Hiroshi Ishiwara, Tanemasa Asano

Research output: Contribution to journalArticle

128 Citations (Scopus)

Abstract

Epitaxial growth of CaF2 films onto Si(100) and (111) substrates and the growth of Si films onto the CaF2/Si structure have been investigated. It has been found from ion channeling and backscattering measurements that the optimum growth temperatures at which the crystalline quality of the CaF2 films is excellent range from 600 to 800°C for Si(111) substrates and from 500 to 600°C for Si (100). It has also been found that a heteroepitaxial Si/CaF2/Si(111) structure is formed by vacuum deposition of Si onto the heated CaF2/Si(111) structure.

Original languageEnglish
Pages (from-to)66-68
Number of pages3
JournalApplied Physics Letters
Volume40
Issue number1
DOIs
Publication statusPublished - Dec 1 1982
Externally publishedYes

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vacuum deposition
insulators
silicon
backscattering
ions
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si. / Ishiwara, Hiroshi; Asano, Tanemasa.

In: Applied Physics Letters, Vol. 40, No. 1, 01.12.1982, p. 66-68.

Research output: Contribution to journalArticle

Ishiwara, Hiroshi ; Asano, Tanemasa. / Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si. In: Applied Physics Letters. 1982 ; Vol. 40, No. 1. pp. 66-68.
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