Similarities in spatial distributions of absolute GeH2 density, radical production rate and particle amount in GeH4 RF discharges

Hiroharu Kawasaki, Junichirou Kida, Kazutaka Sakamoto, Tsuyoshi Fukuzawa, Masaharu Shiratani, Yukio Watanabe

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In order to study the particle growth processes in GeH4 RF discharges, the spatial distribution of the absolute GeH2 density is measured for the first time together with those of particle amount and radical production rate (Ge emission intensity) in a moderately high power range of 0.5-1.0 W/cm2. The particles are generated and grow around the plasma/sheath boundary near the powered electrode, and the spatial distribution of their amount is similar to those of radical production rate and GeH2 density. Furthermore, GeH2 density is about 1010 cm-3, being close to SiH2 density in SiH4 discharges for the similar conditions of RF power and pressure. These results indicate that GeH2 is a highly reactive radical having a high production rate and hence is a candidate for the main contributor to the particle growth.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number4 B
Publication statusPublished - 1998

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Spatial distribution
spatial distribution
Plasma sheaths
plasma sheaths
Electrodes
electrodes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Similarities in spatial distributions of absolute GeH2 density, radical production rate and particle amount in GeH4 RF discharges. / Kawasaki, Hiroharu; Kida, Junichirou; Sakamoto, Kazutaka; Fukuzawa, Tsuyoshi; Shiratani, Masaharu; Watanabe, Yukio.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 37, No. 4 B, 1998.

Research output: Contribution to journalArticle

@article{8ecd91f23cd34e82820f3c4cbe0c5dcd,
title = "Similarities in spatial distributions of absolute GeH2 density, radical production rate and particle amount in GeH4 RF discharges",
abstract = "In order to study the particle growth processes in GeH4 RF discharges, the spatial distribution of the absolute GeH2 density is measured for the first time together with those of particle amount and radical production rate (Ge emission intensity) in a moderately high power range of 0.5-1.0 W/cm2. The particles are generated and grow around the plasma/sheath boundary near the powered electrode, and the spatial distribution of their amount is similar to those of radical production rate and GeH2 density. Furthermore, GeH2 density is about 1010 cm-3, being close to SiH2 density in SiH4 discharges for the similar conditions of RF power and pressure. These results indicate that GeH2 is a highly reactive radical having a high production rate and hence is a candidate for the main contributor to the particle growth.",
author = "Hiroharu Kawasaki and Junichirou Kida and Kazutaka Sakamoto and Tsuyoshi Fukuzawa and Masaharu Shiratani and Yukio Watanabe",
year = "1998",
language = "English",
volume = "37",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "4 B",

}

TY - JOUR

T1 - Similarities in spatial distributions of absolute GeH2 density, radical production rate and particle amount in GeH4 RF discharges

AU - Kawasaki, Hiroharu

AU - Kida, Junichirou

AU - Sakamoto, Kazutaka

AU - Fukuzawa, Tsuyoshi

AU - Shiratani, Masaharu

AU - Watanabe, Yukio

PY - 1998

Y1 - 1998

N2 - In order to study the particle growth processes in GeH4 RF discharges, the spatial distribution of the absolute GeH2 density is measured for the first time together with those of particle amount and radical production rate (Ge emission intensity) in a moderately high power range of 0.5-1.0 W/cm2. The particles are generated and grow around the plasma/sheath boundary near the powered electrode, and the spatial distribution of their amount is similar to those of radical production rate and GeH2 density. Furthermore, GeH2 density is about 1010 cm-3, being close to SiH2 density in SiH4 discharges for the similar conditions of RF power and pressure. These results indicate that GeH2 is a highly reactive radical having a high production rate and hence is a candidate for the main contributor to the particle growth.

AB - In order to study the particle growth processes in GeH4 RF discharges, the spatial distribution of the absolute GeH2 density is measured for the first time together with those of particle amount and radical production rate (Ge emission intensity) in a moderately high power range of 0.5-1.0 W/cm2. The particles are generated and grow around the plasma/sheath boundary near the powered electrode, and the spatial distribution of their amount is similar to those of radical production rate and GeH2 density. Furthermore, GeH2 density is about 1010 cm-3, being close to SiH2 density in SiH4 discharges for the similar conditions of RF power and pressure. These results indicate that GeH2 is a highly reactive radical having a high production rate and hence is a candidate for the main contributor to the particle growth.

UR - http://www.scopus.com/inward/record.url?scp=0032046808&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032046808&partnerID=8YFLogxK

M3 - Article

VL - 37

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -