Similarities in spatial distributions of absolute GeH2 density, radical production rate and particle amount in GeH4 RF discharges

Hiroharu Kawasaki; Junichirou Kida; Kazutaka Sakamoto; Tsuyoshi Fukuzawa; Masaharu Shiratani; Yukio Watanabe

doi:10.1143/jjap.37.l475

Similarities in spatial distributions of absolute GeH₂ density, radical production rate and particle amount in GeH₄ RF discharges

Hiroharu Kawasaki, Junichirou Kida, Kazutaka Sakamoto, Tsuyoshi Fukuzawa, Masaharu Shiratani, Yukio Watanabe

Research output: Contribution to journal › Article › peer-review

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Abstract

In order to study the particle growth processes in GeH₄ RF discharges, the spatial distribution of the absolute GeH₂ density is measured for the first time together with those of particle amount and radical production rate (Ge emission intensity) in a moderately high power range of 0.5-1.0 W/cm². The particles are generated and grow around the plasma/sheath boundary near the powered electrode, and the spatial distribution of their amount is similar to those of radical production rate and GeH₂ density. Furthermore, GeH₂ density is about 10¹⁰ cm^-3, being close to SiH₂ density in SiH₄ discharges for the similar conditions of RF power and pressure. These results indicate that GeH₂ is a highly reactive radical having a high production rate and hence is a candidate for the main contributor to the particle growth.

Original language	English
Pages (from-to)	L475-L477
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	37
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.37.l475
Publication status	Published - 1998

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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10.1143/jjap.37.l475

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title = "Similarities in spatial distributions of absolute GeH2 density, radical production rate and particle amount in GeH4 RF discharges",

abstract = "In order to study the particle growth processes in GeH4 RF discharges, the spatial distribution of the absolute GeH2 density is measured for the first time together with those of particle amount and radical production rate (Ge emission intensity) in a moderately high power range of 0.5-1.0 W/cm2. The particles are generated and grow around the plasma/sheath boundary near the powered electrode, and the spatial distribution of their amount is similar to those of radical production rate and GeH2 density. Furthermore, GeH2 density is about 1010 cm-3, being close to SiH2 density in SiH4 discharges for the similar conditions of RF power and pressure. These results indicate that GeH2 is a highly reactive radical having a high production rate and hence is a candidate for the main contributor to the particle growth.",

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T1 - Similarities in spatial distributions of absolute GeH2 density, radical production rate and particle amount in GeH4 RF discharges

AU - Kawasaki, Hiroharu

AU - Kida, Junichirou

AU - Sakamoto, Kazutaka

AU - Fukuzawa, Tsuyoshi

AU - Shiratani, Masaharu

AU - Watanabe, Yukio

PY - 1998

Y1 - 1998

N2 - In order to study the particle growth processes in GeH4 RF discharges, the spatial distribution of the absolute GeH2 density is measured for the first time together with those of particle amount and radical production rate (Ge emission intensity) in a moderately high power range of 0.5-1.0 W/cm2. The particles are generated and grow around the plasma/sheath boundary near the powered electrode, and the spatial distribution of their amount is similar to those of radical production rate and GeH2 density. Furthermore, GeH2 density is about 1010 cm-3, being close to SiH2 density in SiH4 discharges for the similar conditions of RF power and pressure. These results indicate that GeH2 is a highly reactive radical having a high production rate and hence is a candidate for the main contributor to the particle growth.

AB - In order to study the particle growth processes in GeH4 RF discharges, the spatial distribution of the absolute GeH2 density is measured for the first time together with those of particle amount and radical production rate (Ge emission intensity) in a moderately high power range of 0.5-1.0 W/cm2. The particles are generated and grow around the plasma/sheath boundary near the powered electrode, and the spatial distribution of their amount is similar to those of radical production rate and GeH2 density. Furthermore, GeH2 density is about 1010 cm-3, being close to SiH2 density in SiH4 discharges for the similar conditions of RF power and pressure. These results indicate that GeH2 is a highly reactive radical having a high production rate and hence is a candidate for the main contributor to the particle growth.

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Similarities in spatial distributions of absolute GeH₂ density, radical production rate and particle amount in GeH₄ RF discharges

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