Similarity analysis on neutron- A nd negative muon-induced MCUs in 65-nm bulk SRAM

Wang Liao, Masanori Hashimoto, Seiya Manabe, Shin Ichiro Abe, Yukinobu Watanabe

Research output: Contribution to journalArticle

Abstract

Multiple-cell upset (MCU) in static random access memory (SRAM) is a major concern in radiation effects on very large scale integration (VLSI) since it can spoil error correcting codes (ECCs). Neutron-induced MCUs have been characterized for terrestrial environment. On the other hand, negative muon-induced MCUs, which are caused by secondary ions generated through muon capture process, were recently reported. Neutron- A nd negative muon-induced MCUs are both caused by secondary ions, and hence, they are expected to have some similarity. In this paper, we compare negative muon- A nd neutron-induced MCUs in 65-nm bulk SRAMs at the irradiation experiments using spallation and quasi-monoenergetic neutrons and monoenergetic negative muons. The measurement results show that the dependencies of MCU event cross section on operating voltage are almost identical. The high operating voltage makes both negative muon- A nd neutron-induced MCU cross sections larger due to parasitic bipolar action. Consequently, large-bit MCUs are observed under the irradiation using both neutrons and muons. On the other hand, at 0.4 V, neutrons induce larger-bit MCUs (> 12 bits) whereas negative muons cause up to 11-bit MCUs. Upsets of 3 or larger bits along word line (WL) are observed at spallation neutron beams. To explain the similarity of MCUs induced by neutrons and negative muons, the Monte Carlo simulation is conducted to investigate the deposited charge. The distributions of deposited charge obtained by the simulation are consistent with the above-mentioned experimental observations.

Original languageEnglish
Article number8732457
Pages (from-to)1390-1397
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume66
Issue number7
DOIs
Publication statusPublished - Jul 1 2019

Fingerprint

random access memory
muons
Neutrons
Data storage equipment
neutrons
spallation
Irradiation
cells
Neutron beams
error correcting codes
Radiation effects
VLSI circuits
Static random access storage
Ions
Electric potential
irradiation
cross sections
neutron beams
electric potential
very large scale integration

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Similarity analysis on neutron- A nd negative muon-induced MCUs in 65-nm bulk SRAM. / Liao, Wang; Hashimoto, Masanori; Manabe, Seiya; Abe, Shin Ichiro; Watanabe, Yukinobu.

In: IEEE Transactions on Nuclear Science, Vol. 66, No. 7, 8732457, 01.07.2019, p. 1390-1397.

Research output: Contribution to journalArticle

Liao, Wang ; Hashimoto, Masanori ; Manabe, Seiya ; Abe, Shin Ichiro ; Watanabe, Yukinobu. / Similarity analysis on neutron- A nd negative muon-induced MCUs in 65-nm bulk SRAM. In: IEEE Transactions on Nuclear Science. 2019 ; Vol. 66, No. 7. pp. 1390-1397.
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