Simple fabrication of a gated field-electron emitter with a vertical thin film formed by ion-beam irradiation

T. Yoshida, M. Nagao, A. Baba, Tanemasa Asano, S. Kanemaru

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The ion-induced-bending (IIB) phenomenon was applied for fabricating a field-emitter array (FEA). The IIB method can form a vertical-thin-film (VTF) structure with micron-order height and a high aspect ratio from a thin film. Accordingly, it only needs small quantities of material and uses no specialized equipment. As a result of the optimization of the IIB phenomenon, the apex radius of the VTF was decreased by decreasing the film thickness. The material dependence of the IIB method was investigated, and the authors found that the molybdenum film gives the largest bending angle of the three refractory metals tested. An emission current of 10 μA from the Mo-VTF emitter with 1000 tips was obtained at relatively low extraction voltage. Then thus conclude that IIB is a very promising method for fabricating a FEA.

Original languageEnglish
Pages (from-to)729-734
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number2
DOIs
Publication statusPublished - Apr 20 2009

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this