Simple fabrication of a gated field-electron emitter with a vertical thin film formed by ion-beam irradiation

T. Yoshida; M. Nagao; A. Baba; Tanemasa Asano; S. Kanemaru

doi:10.1116/1.3100220

Simple fabrication of a gated field-electron emitter with a vertical thin film formed by ion-beam irradiation

T. Yoshida, M. Nagao, A. Baba, Tanemasa Asano, S. Kanemaru

Integrated Electronic Systems

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The ion-induced-bending (IIB) phenomenon was applied for fabricating a field-emitter array (FEA). The IIB method can form a vertical-thin-film (VTF) structure with micron-order height and a high aspect ratio from a thin film. Accordingly, it only needs small quantities of material and uses no specialized equipment. As a result of the optimization of the IIB phenomenon, the apex radius of the VTF was decreased by decreasing the film thickness. The material dependence of the IIB method was investigated, and the authors found that the molybdenum film gives the largest bending angle of the three refractory metals tested. An emission current of 10 μA from the Mo-VTF emitter with 1000 tips was obtained at relatively low extraction voltage. Then thus conclude that IIB is a very promising method for fabricating a FEA.

Original language	English
Pages (from-to)	729-734
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	2
DOIs	https://doi.org/10.1116/1.3100220
Publication status	Published - Apr 20 2009

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.3100220

Cite this

@article{304226a332074ac0b68096cd046546d3,

title = "Simple fabrication of a gated field-electron emitter with a vertical thin film formed by ion-beam irradiation",

abstract = "The ion-induced-bending (IIB) phenomenon was applied for fabricating a field-emitter array (FEA). The IIB method can form a vertical-thin-film (VTF) structure with micron-order height and a high aspect ratio from a thin film. Accordingly, it only needs small quantities of material and uses no specialized equipment. As a result of the optimization of the IIB phenomenon, the apex radius of the VTF was decreased by decreasing the film thickness. The material dependence of the IIB method was investigated, and the authors found that the molybdenum film gives the largest bending angle of the three refractory metals tested. An emission current of 10 μA from the Mo-VTF emitter with 1000 tips was obtained at relatively low extraction voltage. Then thus conclude that IIB is a very promising method for fabricating a FEA.",

author = "T. Yoshida and M. Nagao and A. Baba and Tanemasa Asano and S. Kanemaru",

year = "2009",

month = apr,

day = "20",

doi = "10.1116/1.3100220",

language = "English",

volume = "27",

pages = "729--734",

journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",

issn = "0734-211X",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Simple fabrication of a gated field-electron emitter with a vertical thin film formed by ion-beam irradiation

AU - Yoshida, T.

AU - Nagao, M.

AU - Baba, A.

AU - Asano, Tanemasa

AU - Kanemaru, S.

PY - 2009/4/20

Y1 - 2009/4/20

N2 - The ion-induced-bending (IIB) phenomenon was applied for fabricating a field-emitter array (FEA). The IIB method can form a vertical-thin-film (VTF) structure with micron-order height and a high aspect ratio from a thin film. Accordingly, it only needs small quantities of material and uses no specialized equipment. As a result of the optimization of the IIB phenomenon, the apex radius of the VTF was decreased by decreasing the film thickness. The material dependence of the IIB method was investigated, and the authors found that the molybdenum film gives the largest bending angle of the three refractory metals tested. An emission current of 10 μA from the Mo-VTF emitter with 1000 tips was obtained at relatively low extraction voltage. Then thus conclude that IIB is a very promising method for fabricating a FEA.

AB - The ion-induced-bending (IIB) phenomenon was applied for fabricating a field-emitter array (FEA). The IIB method can form a vertical-thin-film (VTF) structure with micron-order height and a high aspect ratio from a thin film. Accordingly, it only needs small quantities of material and uses no specialized equipment. As a result of the optimization of the IIB phenomenon, the apex radius of the VTF was decreased by decreasing the film thickness. The material dependence of the IIB method was investigated, and the authors found that the molybdenum film gives the largest bending angle of the three refractory metals tested. An emission current of 10 μA from the Mo-VTF emitter with 1000 tips was obtained at relatively low extraction voltage. Then thus conclude that IIB is a very promising method for fabricating a FEA.

UR - http://www.scopus.com/inward/record.url?scp=64549139400&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=64549139400&partnerID=8YFLogxK

U2 - 10.1116/1.3100220

DO - 10.1116/1.3100220

M3 - Article

AN - SCOPUS:64549139400

SN - 0734-211X

VL - 27

SP - 729

EP - 734

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

IS - 2

ER -

Simple fabrication of a gated field-electron emitter with a vertical thin film formed by ion-beam irradiation

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this