Simulated characteristics of deep-submicrometer recessed channel epi-MOSFETs

Rohana Perera, Akihiro Ikeda, Yukinori Kuroki

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Characteristics of ultra short channel length recessed channel n-MOSFETs on a p on p+ epitaxial layer (RC epi-MOSFET) were simulated using the two dimensional device simulator MEDICI. The simulated recessed channel (RC) structure consists of thicker source/drain, zero source/drain junction depth and a lightly doped channel layer. Conventional short channel planar MOSFETs and RC-MOSFETs with uniformly doped substrate were also simulated for performance comparison. High field simulations were carried out using carrier energy balance equations while the single carrier drift-diffusion set of equations was used for low field simulations. Simulation results showed that the RC epi- structure has suppressed threshold voltage roll-off and lower subthreshold swing compared with planar and RC-MOSFETs with uniform substrate doping, without significant reduction in on-state current.

Original languageEnglish
Pages (from-to)67-72
Number of pages6
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume9
Issue number2
Publication statusPublished - Sep 2004
Externally publishedYes

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Epitaxial layers
Substrates
Energy balance
Threshold voltage
Simulators
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Engineering (miscellaneous)

Cite this

Simulated characteristics of deep-submicrometer recessed channel epi-MOSFETs. / Perera, Rohana; Ikeda, Akihiro; Kuroki, Yukinori.

In: Research Reports on Information Science and Electrical Engineering of Kyushu University, Vol. 9, No. 2, 09.2004, p. 67-72.

Research output: Contribution to journalArticle

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