Simulated emission from optically pumped GaN quantum dots

Tanaka Satoru, Hideki Hirayama, Yoshinobu Aoyagi, Yukio Narukawa, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita

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Stimulated emission was observed from optically pumped GaN quantum dots in an AlxGa1-x N separate confinement heterostructure fabricated on 6H-SiC(0001) substrate by metal organic chemical vapor deposition. Nanostructural GaN quantum dots, with an average size of ∼10 nm width, ∼1-2 nm height, and density of ∼1011Cm-2, were self-assembled on the AlxGa1-xN cladding layer surface. The stimulated emission peak was observed at ∼3.48 eV, which is ∼50 meV lower than that of spontaneous emission. The excitation power dependence on the emission intensity clearly indicates threshold pump power density of 0.75 MW/cm2 for the onset of stimulated emission.

Original languageEnglish
Pages (from-to)1299-1301
Number of pages3
JournalApplied Physics Letters
Issue number10
Publication statusPublished - Sep 8 1997
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Satoru, T., Hirayama, H., Aoyagi, Y., Narukawa, Y., Kawakami, Y., Fujita, S., & Fujita, S. (1997). Simulated emission from optically pumped GaN quantum dots. Applied Physics Letters, 71(10), 1299-1301.