@inproceedings{064aa33743a74799bf7e7582d2d10529,
title = "Simulation analysis of point defects in a silicon ingot during a unidirectional solidification process for solar cells",
abstract = "A transient global model was used to obtain the solution of a thermal field within the entire furnace of a unidirectional solidification process. The melt-solid interface shape was obtained by a dynamic interface tracking method. Then, based on the global solution of heat transfer, the effects of growth rate Vg, temperature gradient G and ratio Vg/G on point defects were analyzed. Finally, several different melt-solid interface shapes were obtained by using different solidification times. Then the effects of solidification time on ratio Vg/G and point defects were also studied.",
author = "Chen, {X. J.} and S. Nakano and Liu, {L. J.} and K. Kakimoto",
year = "2009",
doi = "10.1149/1.3096568",
language = "English",
isbn = "9781615676460",
series = "ECS Transactions",
number = "1 PART 2",
pages = "1031--1035",
booktitle = "ECS Transactions - ISTC/CSTIC 2009 (CISTC)",
edition = "1 PART 2",
note = "ISTC/CSTIC 2009 (CISTC) ; Conference date: 19-03-2009 Through 20-03-2009",
}