Simulation analysis of point defects in a silicon ingot during a unidirectional solidification process for solar cells

X. J. Chen, S. Nakano, L. J. Liu, K. Kakimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A transient global model was used to obtain the solution of a thermal field within the entire furnace of a unidirectional solidification process. The melt-solid interface shape was obtained by a dynamic interface tracking method. Then, based on the global solution of heat transfer, the effects of growth rate Vg, temperature gradient G and ratio Vg/G on point defects were analyzed. Finally, several different melt-solid interface shapes were obtained by using different solidification times. Then the effects of solidification time on ratio Vg/G and point defects were also studied.

Original languageEnglish
Title of host publicationECS Transactions - ISTC/CSTIC 2009 (CISTC)
Pages1031-1035
Number of pages5
Edition1 PART 2
DOIs
Publication statusPublished - Dec 1 2009
EventISTC/CSTIC 2009 (CISTC) - Shanghai, China
Duration: Mar 19 2009Mar 20 2009

Publication series

NameECS Transactions
Number1 PART 2
Volume18
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherISTC/CSTIC 2009 (CISTC)
CountryChina
CityShanghai
Period3/19/093/20/09

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Chen, X. J., Nakano, S., Liu, L. J., & Kakimoto, K. (2009). Simulation analysis of point defects in a silicon ingot during a unidirectional solidification process for solar cells. In ECS Transactions - ISTC/CSTIC 2009 (CISTC) (1 PART 2 ed., pp. 1031-1035). (ECS Transactions; Vol. 18, No. 1 PART 2). https://doi.org/10.1149/1.3096568