TY - GEN
T1 - Simulation, fabrication and characterization of 4h-SiC floating junction schottky barrier diodes (Super-SBDs)
AU - Ota, C.
AU - Nishio, J.
AU - Hatakeyama, T.
AU - Shinohe, T.
AU - Kojima, K.
AU - Nishizawa, S.
AU - Ohashi, H.
N1 - Publisher Copyright:
© (2007) Trans Tech Publications, Switzerland.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2007
Y1 - 2007
N2 - The calculation for 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) was carried out by device simulation and the optimized device structure was fabricated. The best characteristics of the Super-SBDs were breakdown voltage of 2700V and the specific on-resistance of 2.57m*cm2. The world record of Bariga’s Figure of Merit (BFOM) for SiC-SBD expressed by 4Vbd2/Ron was improved to 11,354MW/cm2.
AB - The calculation for 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) was carried out by device simulation and the optimized device structure was fabricated. The best characteristics of the Super-SBDs were breakdown voltage of 2700V and the specific on-resistance of 2.57m*cm2. The world record of Bariga’s Figure of Merit (BFOM) for SiC-SBD expressed by 4Vbd2/Ron was improved to 11,354MW/cm2.
UR - http://www.scopus.com/inward/record.url?scp=38449096325&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=38449096325&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.556-557.881
DO - 10.4028/www.scientific.net/MSF.556-557.881
M3 - Conference contribution
AN - SCOPUS:38449096325
SN - 0878494421
SN - 9780878494422
SN - 9780878494422
T3 - Materials Science Forum
SP - 881
EP - 884
BT - Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials
A2 - Wright, N.
A2 - Johnson, C.M.
A2 - Vassilevski, K.
A2 - Nikitina, I.
A2 - Horsfall, A.
PB - Trans Tech Publications Ltd
T2 - 6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006
Y2 - 3 September 2006 through 7 September 2006
ER -