Simulation, fabrication and characterization of 4H-SiC floating junction schottky barrier diodes (Super-SBDs)

C. Ota, J. Nishio, T. Hatakeyama, T. Shinohe, K. Kojima, S. Nishizawa, H. Ohashi

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

The calculation for 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) was carried out by device simulation and the optimized device structure was fabricated. The best characteristics of the Super-SBDs were breakdown voltage of 2700V and the specific on-resistance of 2.57mΩcm 2. The world record of Bariga's Figure of Merit (BFOM) for SiC-SBD expressed by 4Vbd2/Ron was improved to 11,354MW/cm2.

Original languageEnglish
Pages (from-to)881-884
Number of pages4
JournalMaterials Science Forum
Volume556-557
Publication statusPublished - Dec 1 2007
Externally publishedYes
Event6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006 - Newcastle upon Tyne, United Kingdom
Duration: Sep 3 2006Sep 7 2007

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ota, C., Nishio, J., Hatakeyama, T., Shinohe, T., Kojima, K., Nishizawa, S., & Ohashi, H. (2007). Simulation, fabrication and characterization of 4H-SiC floating junction schottky barrier diodes (Super-SBDs). Materials Science Forum, 556-557, 881-884.