Simulation, fabrication and characterization of 4H-SiC floating junction schottky barrier diodes (Super-SBDs)

C. Ota, J. Nishio, T. Hatakeyama, T. Shinohe, K. Kojima, S. Nishizawa, H. Ohashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The calculation for 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) was carried out by device simulation and the optimized device structure was fabricated. The best characteristics of the Super-SBDs were breakdown voltage of 2700V and the specific on-resistance of 2.57mΩcm 2. The world record of Bariga's Figure of Merit (BFOM) for SiC-SBD expressed by 4Vbd2/Ron was improved to 11,354MW/cm2.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2006 - ECSCRM 20006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials
EditorsN. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina, A. Horsfall
PublisherTrans Tech Publications Ltd
Pages881-884
Number of pages4
ISBN (Print)0878494421, 9780878494422, 9780878494422
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006 - Newcastle upon Tyne, United Kingdom
Duration: Sep 3 2006Sep 7 2007

Publication series

NameMaterials Science Forum
Volume556-557
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006
CountryUnited Kingdom
CityNewcastle upon Tyne
Period9/3/069/7/07

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Simulation, fabrication and characterization of 4H-SiC floating junction schottky barrier diodes (Super-SBDs)'. Together they form a unique fingerprint.

  • Cite this

    Ota, C., Nishio, J., Hatakeyama, T., Shinohe, T., Kojima, K., Nishizawa, S., & Ohashi, H. (2007). Simulation, fabrication and characterization of 4H-SiC floating junction schottky barrier diodes (Super-SBDs). In N. Wright, C. M. Johnson, K. Vassilevski, I. Nikitina, & A. Horsfall (Eds.), Silicon Carbide and Related Materials 2006 - ECSCRM 20006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials (pp. 881-884). (Materials Science Forum; Vol. 556-557). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-442-1.881