Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability

Wataru Saito; Shin ichi Nishizawa

doi:10.1109/LED.2021.3075657

Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability

Wataru Saito, Shin ichi Nishizawa

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A new device design in trench-gate insulated gate bipolar transistor (IGBT) with dual gate control is proposed for high switching controllability with low loss operation. Injection enhancement effect is effective to obtain low power loss operation of IGBTs. However, excess drift carriers limit turn-off dV/dt, and turn-on dI/dt, and the switching controllability by the external gate resistance is degraded. Surface buffer (SB) IGBT with dual gate control is effective to improve the switching controllability, because the hole current can be modulated effectively by the p-MOS control. TCAD simulation results show the SB-IGBT type-II with dual gate control is the best choice for good turn-off and turn-on switching performances.

Original language	English
Journal	IEEE Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2021.3075657
Publication status	Accepted/In press - 2021

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2021.3075657

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title = "Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability",

abstract = "A new device design in trench-gate insulated gate bipolar transistor (IGBT) with dual gate control is proposed for high switching controllability with low loss operation. Injection enhancement effect is effective to obtain low power loss operation of IGBTs. However, excess drift carriers limit turn-off dV/dt, and turn-on dI/dt, and the switching controllability by the external gate resistance is degraded. Surface buffer (SB) IGBT with dual gate control is effective to improve the switching controllability, because the hole current can be modulated effectively by the p-MOS control. TCAD simulation results show the SB-IGBT type-II with dual gate control is the best choice for good turn-off and turn-on switching performances.",

author = "Wataru Saito and Nishizawa, {Shin ichi}",

note = "Publisher Copyright: IEEE",

year = "2021",

doi = "10.1109/LED.2021.3075657",

language = "English",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability

AU - Saito, Wataru

AU - Nishizawa, Shin ichi

N1 - Publisher Copyright: IEEE

PY - 2021

Y1 - 2021

N2 - A new device design in trench-gate insulated gate bipolar transistor (IGBT) with dual gate control is proposed for high switching controllability with low loss operation. Injection enhancement effect is effective to obtain low power loss operation of IGBTs. However, excess drift carriers limit turn-off dV/dt, and turn-on dI/dt, and the switching controllability by the external gate resistance is degraded. Surface buffer (SB) IGBT with dual gate control is effective to improve the switching controllability, because the hole current can be modulated effectively by the p-MOS control. TCAD simulation results show the SB-IGBT type-II with dual gate control is the best choice for good turn-off and turn-on switching performances.

AB - A new device design in trench-gate insulated gate bipolar transistor (IGBT) with dual gate control is proposed for high switching controllability with low loss operation. Injection enhancement effect is effective to obtain low power loss operation of IGBTs. However, excess drift carriers limit turn-off dV/dt, and turn-on dI/dt, and the switching controllability by the external gate resistance is degraded. Surface buffer (SB) IGBT with dual gate control is effective to improve the switching controllability, because the hole current can be modulated effectively by the p-MOS control. TCAD simulation results show the SB-IGBT type-II with dual gate control is the best choice for good turn-off and turn-on switching performances.

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M3 - Article

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability

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