SiN used as a Stressor in Germanium-On-Insulator Substrate

Sethavut Duangchan, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima, Akiyoshi Baba

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This research aims to show the advantage of using silicon nitride as a stressor in a strained germanium-on-insulator substrate (strained Ge). A Si substrate is patterned on the surface before bonding for controlling the shape and the position of strained Ge. The SiN film is deposited on Ge substrate by PE-CVD with 150 nm thick approximately. Two substrates are bonded together by surface-Activation bonding with 200°C post-Anneal. It was found that the tensile strain of 1.16% for the flat part and 2.03% for the bucking part, which is higher than other reported GOI using SiO2 layer.

Original languageEnglish
Title of host publicationIEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728148700
DOIs
Publication statusPublished - Oct 2019
Event2019 IEEE International 3D Systems Integration Conference, 3DIC 2019 - Sendai, Japan
Duration: Oct 8 2019Oct 10 2019

Publication series

NameIEEE 2019 International 3D Systems Integration Conference, 3DIC 2019

Conference

Conference2019 IEEE International 3D Systems Integration Conference, 3DIC 2019
CountryJapan
CitySendai
Period10/8/1910/10/19

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Duangchan, S., Yamamoto, K., Wang, D., Nakashima, H., & Baba, A. (2019). SiN used as a Stressor in Germanium-On-Insulator Substrate. In IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019 [9058896] (IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/3DIC48104.2019.9058896