Single-crystal growth of Bi-Sb-Te thermoelectric materials by halide chemical vapor transport technique

Mikio Koyano, Junya Tanaka, Koichiro Suekuni, Tomoki Ariga

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This report describes synthesis of binary Bi 2Te 3 and ternary Bi 0.5Sb 1.5Te 3 single crystals using the halide chemical vapor transport technique. For synthesis of ternary Bi 0.5Sb 1.5Te 3, BiBr 3 is a more effective transport agent compared with iodine I 2. The single crystal includes a few atomic percent of Br. The Bi 0.5Sb 1.5Te 3 crystal shows p-type conduction and has a comparatively large residual resistivity ratio. The crystal exhibits relatively high electrical resistivity and high Seebeck coefficient. These high values are attributed to decrease of the hole concentration p due to doping of the transport agent Br.

Original languageEnglish
Pages (from-to)1317-1321
Number of pages5
JournalJournal of Electronic Materials
Volume41
Issue number6
DOIs
Publication statusPublished - Jun 1 2012
Externally publishedYes

Fingerprint

thermoelectric materials
Crystallization
Crystal growth
halides
crystal growth
Vapors
Single crystals
vapors
Hole concentration
Crystals
electrical resistivity
Seebeck coefficient
single crystals
synthesis
Seebeck effect
Iodine
iodine
crystals
Doping (additives)
conduction

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Single-crystal growth of Bi-Sb-Te thermoelectric materials by halide chemical vapor transport technique. / Koyano, Mikio; Tanaka, Junya; Suekuni, Koichiro; Ariga, Tomoki.

In: Journal of Electronic Materials, Vol. 41, No. 6, 01.06.2012, p. 1317-1321.

Research output: Contribution to journalArticle

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