Single-crystal growth of Bi-Sb-Te thermoelectric materials by halide chemical vapor transport technique

Mikio Koyano, Junya Tanaka, Koichiro Suekuni, Tomoki Ariga

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This report describes synthesis of binary Bi 2Te 3 and ternary Bi 0.5Sb 1.5Te 3 single crystals using the halide chemical vapor transport technique. For synthesis of ternary Bi 0.5Sb 1.5Te 3, BiBr 3 is a more effective transport agent compared with iodine I 2. The single crystal includes a few atomic percent of Br. The Bi 0.5Sb 1.5Te 3 crystal shows p-type conduction and has a comparatively large residual resistivity ratio. The crystal exhibits relatively high electrical resistivity and high Seebeck coefficient. These high values are attributed to decrease of the hole concentration p due to doping of the transport agent Br.

Original languageEnglish
Pages (from-to)1317-1321
Number of pages5
JournalJournal of Electronic Materials
Volume41
Issue number6
DOIs
Publication statusPublished - Jun 1 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Single-crystal growth of Bi-Sb-Te thermoelectric materials by halide chemical vapor transport technique'. Together they form a unique fingerprint.

  • Cite this