Single crystal growth of rare-earth gallates and epitactic growth nature of high-Tc superconducting YBCO thin films on them

S. Miyazawa, M. Sasaura, Masashi Mukaida

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Rare-earth gallates, NdGaO3 and PrGaO3, as substrates lattice-matched to superconducting YBCO thin films are grown using a Czochralski pulling technique. NdGaO3 was twin-free, while PrGaO3 was badly twinned. Twinning in PrGaO3 is presumably due to the first-order phase transition below the melting temperature. On twin-free NdGaO3 substrates, the initial growth stages of YBCO ultrathin films are observed by an atomic force microscope (AFM). AFM reveals that the growth mode is of Stranski-Krastanov, showing two-dimensional lateral growth and subsequent three-dimensional island formation, where the growth unit is one or multiples of the c-axis cell length in height.

Original languageEnglish
Pages (from-to)704-708
Number of pages5
JournalJournal of Crystal Growth
Volume128
Issue number1-4 PART 2
DOIs
Publication statusPublished - Mar 1 1993
Externally publishedYes

Fingerprint

gallates
Superconducting films
Crystallization
Crystal growth
Rare earths
crystal growth
rare earth elements
Single crystals
single crystals
thin films
Microscopes
microscopes
Ultrathin films
Twinning
pulling
Substrates
twinning
Melting point
Phase transitions
melting

All Science Journal Classification (ASJC) codes

  • Inorganic Chemistry
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Single crystal growth of rare-earth gallates and epitactic growth nature of high-Tc superconducting YBCO thin films on them. / Miyazawa, S.; Sasaura, M.; Mukaida, Masashi.

In: Journal of Crystal Growth, Vol. 128, No. 1-4 PART 2, 01.03.1993, p. 704-708.

Research output: Contribution to journalArticle

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