Single-crystalline (100) Ge networks on insulators by rapid-melting growth along hexagonal mesh-pattern

Kaoru Toko, Yasuharu Ohta, Takashi Sakane, Taizoh Sadoh, Ichiro Mizushima, Masanobu Miyao

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Single-crystalline-Ge (c-Ge) networks on insulator films formed on Si substrates are essential for integrating high-speed and multifunctional devices onto the Si-platform. Rapid-melting-growth of mesh-patterned amorphous-Ge is examined over large areas (500×250 μ m2). For squared-mesh-pattern, polycrystalline-Ge forms throughout most of the mesh, though c-Ge is obtained near (<100 μm) Si-seed. Based on the consideration of geometric-effects, mesh-patterns are changed to hexagonal. This realizes c-Ge networks over the entire insulator area. These results indicate that Ge growth initiated from Si-seed propagates laterally over the hexagonal-mesh- pattern though bending and branching. These unique c-Ge-networks on insulators facilitate Ge-based advanced-devices on the Si-platform.

Original languageEnglish
Article number042101
JournalApplied Physics Letters
Volume98
Issue number4
DOIs
Publication statusPublished - Jan 24 2011

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mesh
melting
insulators
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high speed

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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Single-crystalline (100) Ge networks on insulators by rapid-melting growth along hexagonal mesh-pattern. / Toko, Kaoru; Ohta, Yasuharu; Sakane, Takashi; Sadoh, Taizoh; Mizushima, Ichiro; Miyao, Masanobu.

In: Applied Physics Letters, Vol. 98, No. 4, 042101, 24.01.2011.

Research output: Contribution to journalArticle

Toko, Kaoru ; Ohta, Yasuharu ; Sakane, Takashi ; Sadoh, Taizoh ; Mizushima, Ichiro ; Miyao, Masanobu. / Single-crystalline (100) Ge networks on insulators by rapid-melting growth along hexagonal mesh-pattern. In: Applied Physics Letters. 2011 ; Vol. 98, No. 4.
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