Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth

Masashi Kurosawa, Yuki Tojo, Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Single-crystalline laterally graded GeSn-on-insulator (GeSnOI) structures are essential to achieve novel device-arrays with various direct-energy-band gaps, which can be merged with high-density Si large-scale-integrated-circuits. We investigate the seeding rapid-melting-growth of narrow stripes with a-Ge/Sn/a-Ge stacked-structures. This achieves laterally graded GeSn crystalline layers on Si substrates covered with SiO 2 films. Stripe-length dependent GeSn lateral-profiles are quantitatively explained by Scheil equation, which enables precise designing of GeSn lateral-profiles. High-crystallinity GeSn stripes without dislocations or stacking faults are also demonstrated.

Original languageEnglish
Article number091905
JournalApplied Physics Letters
Volume101
Issue number9
DOIs
Publication statusPublished - Aug 27 2012

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melting
insulators
inoculation
profiles
crystal defects
integrated circuits
energy bands
crystallinity

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth. / Kurosawa, Masashi; Tojo, Yuki; Matsumura, Ryo; Sadoh, Taizoh; Miyao, Masanobu.

In: Applied Physics Letters, Vol. 101, No. 9, 091905, 27.08.2012.

Research output: Contribution to journalArticle

Kurosawa, Masashi ; Tojo, Yuki ; Matsumura, Ryo ; Sadoh, Taizoh ; Miyao, Masanobu. / Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth. In: Applied Physics Letters. 2012 ; Vol. 101, No. 9.
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