TY - GEN
T1 - Single crystallization of Ba 8Al xSi 46-x clathrate by using the flux Czochralski method
AU - Nakakohara, Yusuke
AU - Mugita, Naoki
AU - Nagatomo, Yuya
AU - Saisho, Makoto
AU - Motooka, Teruaki
AU - Teranishi, Ryo
AU - Munetoh, Shinji
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012
Y1 - 2012
N2 - We have synthesized single crystalline Ba 8Al xSi x-46 clathrates by using the flux Czochralski (CZ) method with Al-rich melt. The specific electric resistivity, the Seebeck coefficient and the power factor of single crystalline Ba 8Al 14Si 32 were 0.73 mΩcm, 70.0μV/K and 6.8×10 -4V 2/K 2Ωm, respectively. These values are higher than that of single crystalline Ba 8Al 12Si 34clathrate because of the reduced carrier concentration. It is indicated that Al contents and the carrier concentration of single crystalline Ba 8Al xSi 46-x can be controlled by using the flux Czochralski method.
AB - We have synthesized single crystalline Ba 8Al xSi x-46 clathrates by using the flux Czochralski (CZ) method with Al-rich melt. The specific electric resistivity, the Seebeck coefficient and the power factor of single crystalline Ba 8Al 14Si 32 were 0.73 mΩcm, 70.0μV/K and 6.8×10 -4V 2/K 2Ωm, respectively. These values are higher than that of single crystalline Ba 8Al 12Si 34clathrate because of the reduced carrier concentration. It is indicated that Al contents and the carrier concentration of single crystalline Ba 8Al xSi 46-x can be controlled by using the flux Czochralski method.
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U2 - 10.1557/opl.2011.1060
DO - 10.1557/opl.2011.1060
M3 - Conference contribution
AN - SCOPUS:84055221958
SN - 9781605113029
T3 - Materials Research Society Symposium Proceedings
SP - 131
EP - 135
BT - Energy Harvesting - Recent Advances in Materials, Devices and Applications
T2 - 2011 MRS Spring Meeting
Y2 - 25 April 2011 through 29 April 2011
ER -