Abstract
We have synthesized single crystalline Ba 8Al xSi x-46 clathrates by using the flux Czochralski (CZ) method with Al-rich melt. The specific electric resistivity, the Seebeck coefficient and the power factor of single crystalline Ba 8Al 14Si 32 were 0.73 mΩcm, 70.0μV/K and 6.8×10 -4V 2/K 2Ωm, respectively. These values are higher than that of single crystalline Ba 8Al 12Si 34clathrate because of the reduced carrier concentration. It is indicated that Al contents and the carrier concentration of single crystalline Ba 8Al xSi 46-x can be controlled by using the flux Czochralski method.
| Original language | English |
|---|---|
| Title of host publication | Energy Harvesting - Recent Advances in Materials, Devices and Applications |
| Pages | 131-135 |
| Number of pages | 5 |
| DOIs | |
| Publication status | Published - Jan 1 2012 |
| Event | 2011 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 25 2011 → Apr 29 2011 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 1325 |
| ISSN (Print) | 0272-9172 |
Other
| Other | 2011 MRS Spring Meeting |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 4/25/11 → 4/29/11 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Single crystallization of Ba 8Al xSi 46-x clathrate by using the flux Czochralski method. / Nakakohara, Yusuke; Mugita, Naoki; Nagatomo, Yuya; Saisho, Makoto; Motooka, Teruaki; Teranishi, Ryo; Munetoh, Shinji.
Energy Harvesting - Recent Advances in Materials, Devices and Applications. 2012. p. 131-135 (Materials Research Society Symposium Proceedings; Vol. 1325).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Single crystallization of Ba 8Al xSi 46-x clathrate by using the flux Czochralski method
AU - Nakakohara, Yusuke
AU - Mugita, Naoki
AU - Nagatomo, Yuya
AU - Saisho, Makoto
AU - Motooka, Teruaki
AU - Teranishi, Ryo
AU - Munetoh, Shinji
PY - 2012/1/1
Y1 - 2012/1/1
N2 - We have synthesized single crystalline Ba 8Al xSi x-46 clathrates by using the flux Czochralski (CZ) method with Al-rich melt. The specific electric resistivity, the Seebeck coefficient and the power factor of single crystalline Ba 8Al 14Si 32 were 0.73 mΩcm, 70.0μV/K and 6.8×10 -4V 2/K 2Ωm, respectively. These values are higher than that of single crystalline Ba 8Al 12Si 34clathrate because of the reduced carrier concentration. It is indicated that Al contents and the carrier concentration of single crystalline Ba 8Al xSi 46-x can be controlled by using the flux Czochralski method.
AB - We have synthesized single crystalline Ba 8Al xSi x-46 clathrates by using the flux Czochralski (CZ) method with Al-rich melt. The specific electric resistivity, the Seebeck coefficient and the power factor of single crystalline Ba 8Al 14Si 32 were 0.73 mΩcm, 70.0μV/K and 6.8×10 -4V 2/K 2Ωm, respectively. These values are higher than that of single crystalline Ba 8Al 12Si 34clathrate because of the reduced carrier concentration. It is indicated that Al contents and the carrier concentration of single crystalline Ba 8Al xSi 46-x can be controlled by using the flux Czochralski method.
UR - http://www.scopus.com/inward/record.url?scp=84055221958&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84055221958&partnerID=8YFLogxK
U2 - 10.1557/opl.2011.1060
DO - 10.1557/opl.2011.1060
M3 - Conference contribution
SN - 9781605113029
T3 - Materials Research Society Symposium Proceedings
SP - 131
EP - 135
BT - Energy Harvesting - Recent Advances in Materials, Devices and Applications
ER -