Single-grain TFTs on location-controlled crystal grains formed by excimer laser crystallization of Si thin films

Hideya Kumomi, Chihiro Shin, Gou Nakagawa, Tanemasa Asano

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

Single-grain Si thin-film transistors with no grain boundary in the channel are fabricated on location-controlled crystal grains formed by excimer-laser crystallization of Si thin films. Both of the n-channel and p-channel single-grain TFTs exhibit superior performance and single-crystal-like characteristics, compared to those over conventional random poly-Si TFTs fabricated by solid-phase crystallization or melting-crystallization on the same substrate, and by the same device process and configuration.

Original languageEnglish
Pages (from-to)773-776
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - Dec 1 2004
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: Dec 13 2004Dec 15 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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