Single-grain TFTs on location-controlled crystal grains formed by excimer laser crystallization of Si thin films

Hideya Kumomi, Chihiro Shin, Gou Nakagawa, Tanemasa Asano

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Single-grain Si thin-film transistors with no grain boundary in the channel are fabricated on location-controlled crystal grains formed by excimer-laser crystallization of Si thin films. Both of the n-channel and p-channel single-grain TFTs exhibit superior performance and single-crystal-like characteristics, compared to those over conventional random poly-Si TFTs fabricated by solid-phase crystallization or melting-crystallization on the same substrate, and by the same device process and configuration.

Original languageEnglish
Pages (from-to)773-776
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - Dec 1 2004
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: Dec 13 2004Dec 15 2004

Fingerprint

Excimer lasers
crystallization
Crystallization
laser
crystal
Thin films
Crystals
Thin film transistors
grain boundary
Polysilicon
Grain boundaries
Melting
melting
Single crystals
substrate
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Single-grain TFTs on location-controlled crystal grains formed by excimer laser crystallization of Si thin films. / Kumomi, Hideya; Shin, Chihiro; Nakagawa, Gou; Asano, Tanemasa.

In: Technical Digest - International Electron Devices Meeting, IEDM, 01.12.2004, p. 773-776.

Research output: Contribution to journalConference article

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