Single InAs nanowire room-temperature near-infrared photodetectors

Jinshui Miao; Weida Hu; Nan Guo; Zhenyu Lu; Xuming Zou; Lei Liao; Suixing Shi; Pingping Chen; Zhiyong Fan; Johnny C. Ho; Tian Xin Li; Xiao Shuang Chen; Wei Lu

doi:10.1021/nn500201g

Single InAs nanowire room-temperature near-infrared photodetectors

Jinshui Miao, Weida Hu, Nan Guo, Zhenyu Lu, Xuming Zou, Lei Liao, Suixing Shi, Pingping Chen, Zhiyong Fan, Johnny C. Ho, Tian Xin Li, Xiao Shuang Chen, Wei Lu

Research output: Contribution to journal › Article › peer-review

215 Citations (Scopus)

Abstract

Here we report InAs nanowire (NW) near-infrared photodetectors having a detection wavelength up to ∼1.5 μm. The single InAs NW photodetectors displayed minimum hysteresis with a high I_on/I_off ratio of 10⁵. At room temperature, the Schottky-Ohmic contacted photodetectors had an external photoresponsivity of ∼5.3 × 10 ³ AW^-1, which is ∼300% larger than that of Ohmic-Ohmic contacted detectors (∼1.9 × 10³ AW^-1). A large enhancement in photoresponsivity (∼300%) had also been achieved in metal Au-cluster-decorated InAs NW photodetectors due to the formation of Schottky junctions at the InAs/Au cluster contacts. The photocurrent decreased when the photodetectors were exposed to ambient atmosphere because of the high surface electron concentration and rich surface defect states in InAs NWs. A theoretical model based on charge transfer and energy band change is proposed to explain this observed performance. To suppress the negative effects of surface defect states and atmospheric molecules, new InAs NW photodetectors with a half-wrapped top-gate had been fabricated by using 10 nm HfO₂ as the top-gate dielectric.

Original language	English
Pages (from-to)	3628-3635
Number of pages	8
Journal	ACS nano
Volume	8
Issue number	4
DOIs	https://doi.org/10.1021/nn500201g
Publication status	Published - Apr 22 2014
Externally published	Yes

All Science Journal Classification (ASJC) codes

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

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10.1021/nn500201g

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@article{cdfc752a4d4148d9b99b1bba3d76869c,

title = "Single InAs nanowire room-temperature near-infrared photodetectors",

abstract = "Here we report InAs nanowire (NW) near-infrared photodetectors having a detection wavelength up to ∼1.5 μm. The single InAs NW photodetectors displayed minimum hysteresis with a high Ion/Ioff ratio of 105. At room temperature, the Schottky-Ohmic contacted photodetectors had an external photoresponsivity of ∼5.3 × 10 3 AW-1, which is ∼300% larger than that of Ohmic-Ohmic contacted detectors (∼1.9 × 103 AW-1). A large enhancement in photoresponsivity (∼300%) had also been achieved in metal Au-cluster-decorated InAs NW photodetectors due to the formation of Schottky junctions at the InAs/Au cluster contacts. The photocurrent decreased when the photodetectors were exposed to ambient atmosphere because of the high surface electron concentration and rich surface defect states in InAs NWs. A theoretical model based on charge transfer and energy band change is proposed to explain this observed performance. To suppress the negative effects of surface defect states and atmospheric molecules, new InAs NW photodetectors with a half-wrapped top-gate had been fabricated by using 10 nm HfO2 as the top-gate dielectric.",

author = "Jinshui Miao and Weida Hu and Nan Guo and Zhenyu Lu and Xuming Zou and Lei Liao and Suixing Shi and Pingping Chen and Zhiyong Fan and Ho, {Johnny C.} and Li, {Tian Xin} and Chen, {Xiao Shuang} and Wei Lu",

year = "2014",

month = apr,

day = "22",

doi = "10.1021/nn500201g",

language = "English",

volume = "8",

pages = "3628--3635",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "4",

}

TY - JOUR

T1 - Single InAs nanowire room-temperature near-infrared photodetectors

AU - Miao, Jinshui

AU - Hu, Weida

AU - Guo, Nan

AU - Lu, Zhenyu

AU - Zou, Xuming

AU - Liao, Lei

AU - Shi, Suixing

AU - Chen, Pingping

AU - Fan, Zhiyong

AU - Ho, Johnny C.

AU - Li, Tian Xin

AU - Chen, Xiao Shuang

AU - Lu, Wei

PY - 2014/4/22

Y1 - 2014/4/22

N2 - Here we report InAs nanowire (NW) near-infrared photodetectors having a detection wavelength up to ∼1.5 μm. The single InAs NW photodetectors displayed minimum hysteresis with a high Ion/Ioff ratio of 105. At room temperature, the Schottky-Ohmic contacted photodetectors had an external photoresponsivity of ∼5.3 × 10 3 AW-1, which is ∼300% larger than that of Ohmic-Ohmic contacted detectors (∼1.9 × 103 AW-1). A large enhancement in photoresponsivity (∼300%) had also been achieved in metal Au-cluster-decorated InAs NW photodetectors due to the formation of Schottky junctions at the InAs/Au cluster contacts. The photocurrent decreased when the photodetectors were exposed to ambient atmosphere because of the high surface electron concentration and rich surface defect states in InAs NWs. A theoretical model based on charge transfer and energy band change is proposed to explain this observed performance. To suppress the negative effects of surface defect states and atmospheric molecules, new InAs NW photodetectors with a half-wrapped top-gate had been fabricated by using 10 nm HfO2 as the top-gate dielectric.

AB - Here we report InAs nanowire (NW) near-infrared photodetectors having a detection wavelength up to ∼1.5 μm. The single InAs NW photodetectors displayed minimum hysteresis with a high Ion/Ioff ratio of 105. At room temperature, the Schottky-Ohmic contacted photodetectors had an external photoresponsivity of ∼5.3 × 10 3 AW-1, which is ∼300% larger than that of Ohmic-Ohmic contacted detectors (∼1.9 × 103 AW-1). A large enhancement in photoresponsivity (∼300%) had also been achieved in metal Au-cluster-decorated InAs NW photodetectors due to the formation of Schottky junctions at the InAs/Au cluster contacts. The photocurrent decreased when the photodetectors were exposed to ambient atmosphere because of the high surface electron concentration and rich surface defect states in InAs NWs. A theoretical model based on charge transfer and energy band change is proposed to explain this observed performance. To suppress the negative effects of surface defect states and atmospheric molecules, new InAs NW photodetectors with a half-wrapped top-gate had been fabricated by using 10 nm HfO2 as the top-gate dielectric.

UR - http://www.scopus.com/inward/record.url?scp=84899428187&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899428187&partnerID=8YFLogxK

U2 - 10.1021/nn500201g

DO - 10.1021/nn500201g

M3 - Article

AN - SCOPUS:84899428187

SN - 1936-0851

VL - 8

SP - 3628

EP - 3635

JO - ACS Nano

JF - ACS Nano

IS - 4

ER -

Single InAs nanowire room-temperature near-infrared photodetectors

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