Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets

Norihiko Kiritani, Masakatsu Hoshi, Satoshi Tanimoto, Kazuhiro Adachi, Shinichi Nishizawa, Tsutomu Yatsuo, Hideyo Okushi, Kazuo Arai

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We fabricated 4H-SiC vertical MOSFETs with contacts to the source, p-well and polycrystalline silicon (polysilicon) gate and these were simultaneously formed from a single material, using one deposition and a single contact annealing process. Typical specific contact resistances of 4.8×10 -5 Ωcm2 for the n+ source region, 1.5×10-6 Ωcm2 for the gate polysilicon and 5.2×10-4 Ωcm2 for the p-well contact region were obtained using Al/Ni (Al∼6%) as the contact metal. Also, the static characteristics of the vertical MOSFETs indicated that the MOS interface can withstand an even higher temperature process such as that used in ohmic-contact formation.

Original languageEnglish
Pages (from-to)669-672
Number of pages4
JournalMaterials Science Forum
Volume433-436
Publication statusPublished - 2003
Externally publishedYes

Fingerprint

Ohmic contacts
Polysilicon
electric contacts
field effect transistors
static characteristics
silicon
Contact resistance
contact resistance
Metals
Annealing
annealing
metals
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kiritani, N., Hoshi, M., Tanimoto, S., Adachi, K., Nishizawa, S., Yatsuo, T., ... Arai, K. (2003). Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets. Materials Science Forum, 433-436, 669-672.

Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets. / Kiritani, Norihiko; Hoshi, Masakatsu; Tanimoto, Satoshi; Adachi, Kazuhiro; Nishizawa, Shinichi; Yatsuo, Tsutomu; Okushi, Hideyo; Arai, Kazuo.

In: Materials Science Forum, Vol. 433-436, 2003, p. 669-672.

Research output: Contribution to journalArticle

Kiritani, N, Hoshi, M, Tanimoto, S, Adachi, K, Nishizawa, S, Yatsuo, T, Okushi, H & Arai, K 2003, 'Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets', Materials Science Forum, vol. 433-436, pp. 669-672.
Kiritani, Norihiko ; Hoshi, Masakatsu ; Tanimoto, Satoshi ; Adachi, Kazuhiro ; Nishizawa, Shinichi ; Yatsuo, Tsutomu ; Okushi, Hideyo ; Arai, Kazuo. / Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets. In: Materials Science Forum. 2003 ; Vol. 433-436. pp. 669-672.
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