Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets

Norihiko Kiritani, Masakatsu Hoshi, Satoshi Tanimoto, Kazuhiro Adachi, Shin ichi Nishizawa, Tsutomu Yatsuo, Hideyo Okushi, Kazuo Arai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

We fabricated 4H-SiC vertical MOSFETs with contacts to the source, p-well and polycrystalline silicon (polysilicon) gate and these were simultaneously formed from a single material, using one deposition and a single contact annealing process. Typical specific contact resistances of 4.8×10 -5 Ωcm2 for the n+ source region, 1.5×10-6 Ωcm2 for the gate polysilicon and 5.2×10-4 Ωcm2 for the p-well contact region were obtained using Al/Ni (Al∼6%) as the contact metal. Also, the static characteristics of the vertical MOSFETs indicated that the MOS interface can withstand an even higher temperature process such as that used in ohmic-contact formation.

Original languageEnglish
Title of host publicationMaterials Science Forum
EditorsPeder Bergman, Erik Janzén
PublisherTrans Tech Publications Ltd
Pages669-672
Number of pages4
ISBN (Print)9780878499205
DOIs
Publication statusPublished - Jan 1 2003
Externally publishedYes
EventProceedings of the 4th European Conference on Silicon Carbide and Related Materials - Linkoping, Sweden
Duration: Sep 2 2002Sep 5 2002

Publication series

NameMaterials Science Forum
Volume433-436
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherProceedings of the 4th European Conference on Silicon Carbide and Related Materials
CountrySweden
CityLinkoping
Period9/2/029/5/02

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Kiritani, N., Hoshi, M., Tanimoto, S., Adachi, K., Nishizawa, S. I., Yatsuo, T., Okushi, H., & Arai, K. (2003). Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets. In P. Bergman, & E. Janzén (Eds.), Materials Science Forum (pp. 669-672). (Materials Science Forum; Vol. 433-436). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/msf.433-436.669