TY - JOUR
T1 - Single-Seed Casting Large-Size Monocrystalline Silicon for High-Efficiency and Low-Cost Solar Cells
AU - Gao, Bing
AU - Nakano, Satoshi
AU - Harada, Hirofumi
AU - Miyamura, Yoshiji
AU - Sekiguchi, Takashi
AU - Kakimoto, Koichi
N1 - Funding Information:
This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI), Japan.
Publisher Copyright:
© 2015 THE AUTHORS. Published by Elsevier LTD on behalf of Chinese Academy of Engineering and Higher Education Press Limited Company
PY - 2015/9/1
Y1 - 2015/9/1
N2 - To grow high-quality and large-size monocrystal-line silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and dislocation multiplication inside the crystal—needed to be addressed. Numerical analysis was used to develop solutions for these challenges. Based on an optimized furnace structure and operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon using the single-seed casting technique. The results revealed that this technique is highly superior to the popular high-performance multicrystalline and multiseed casting mono-like techniques.
AB - To grow high-quality and large-size monocrystal-line silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and dislocation multiplication inside the crystal—needed to be addressed. Numerical analysis was used to develop solutions for these challenges. Based on an optimized furnace structure and operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon using the single-seed casting technique. The results revealed that this technique is highly superior to the popular high-performance multicrystalline and multiseed casting mono-like techniques.
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U2 - 10.15302/J-ENG-2015032
DO - 10.15302/J-ENG-2015032
M3 - Article
AN - SCOPUS:85002829439
SN - 2095-8099
VL - 1
SP - 378
EP - 383
JO - Engineering
JF - Engineering
IS - 3
ER -