Single-step metal-insulator transition in thin film-based vanadium dioxide nanowires with a 20 nm electrode gap

Yoshihide Tsuji, Teruo Kanki, Yasukazu Murakami, Hidekazu Tanaka

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We demonstrated a single resistance jump with orders of magnitude changes caused by a metal-insulator transition (MIT) in one domain in single-crystal VO2 nanowires with a 20 nm electrode gap. The nanowires were prepared from VO2 thin films on TiO2 (001) substrates and can provide numerous devices on a monolithic substrate using desired designs with precise positioning. The transport behavior of a single domain provides a simple understanding of the MIT and will apply an effective homogeneous electric field to a VO2 channel, aiding the development of Mott field-effect transistors and other devices using electronic phase changes.

Original languageEnglish
Article number025003
JournalApplied Physics Express
Volume12
Issue number2
DOIs
Publication statusPublished - Feb 1 2019

Fingerprint

Metal insulator transition
dioxides
Vanadium
vanadium
Nanowires
nanowires
insulators
Thin films
Electrodes
electrodes
Substrates
thin films
Field effect transistors
metals
positioning
field effect transistors
Electric fields
Single crystals
electric fields
single crystals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Single-step metal-insulator transition in thin film-based vanadium dioxide nanowires with a 20 nm electrode gap. / Tsuji, Yoshihide; Kanki, Teruo; Murakami, Yasukazu; Tanaka, Hidekazu.

In: Applied Physics Express, Vol. 12, No. 2, 025003, 01.02.2019.

Research output: Contribution to journalArticle

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