TY - JOUR
T1 - Single-step metal-insulator transition in thin film-based vanadium dioxide nanowires with a 20 nm electrode gap
AU - Tsuji, Yoshihide
AU - Kanki, Teruo
AU - Murakami, Yasukazu
AU - Tanaka, Hidekazu
N1 - Funding Information:
Acknowledgments This work was supported by a Grant-in-Aid for Scientific Research A (No. 17H01054) and a Grant-in-Aid for Scientific Research B (No. 16H03871). Part of this work was also supported by a “Nanotechnology Platform Project (Nanotechnology Open Facilities in Osaka University)” of MEXT, Japan [S-17-OS-0014 and F-17-OS-0014]. This work was performed under the Cooperative Research Program of “Network Joint Research Center for Materials and Devices.” We thank Natasha Lundin, Ph.D., from Edanz Group (www.edanzediting.com/ac) for editing a draft of this manuscript.
Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019/2
Y1 - 2019/2
N2 - We demonstrated a single resistance jump with orders of magnitude changes caused by a metal-insulator transition (MIT) in one domain in single-crystal VO2 nanowires with a 20 nm electrode gap. The nanowires were prepared from VO2 thin films on TiO2 (001) substrates and can provide numerous devices on a monolithic substrate using desired designs with precise positioning. The transport behavior of a single domain provides a simple understanding of the MIT and will apply an effective homogeneous electric field to a VO2 channel, aiding the development of Mott field-effect transistors and other devices using electronic phase changes.
AB - We demonstrated a single resistance jump with orders of magnitude changes caused by a metal-insulator transition (MIT) in one domain in single-crystal VO2 nanowires with a 20 nm electrode gap. The nanowires were prepared from VO2 thin films on TiO2 (001) substrates and can provide numerous devices on a monolithic substrate using desired designs with precise positioning. The transport behavior of a single domain provides a simple understanding of the MIT and will apply an effective homogeneous electric field to a VO2 channel, aiding the development of Mott field-effect transistors and other devices using electronic phase changes.
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U2 - 10.7567/1882-0786/aafa9e
DO - 10.7567/1882-0786/aafa9e
M3 - Article
AN - SCOPUS:85062272116
SN - 1882-0778
VL - 12
JO - Applied Physics Express
JF - Applied Physics Express
IS - 2
M1 - 025003
ER -