Single step method to deposit Si quantum dot films using H2 + SiH4 VHF discharges and electron mobility in a Si quantum dot solar cell

Masaharu Shiratani, Kazunori Koga, Soichiro Ando, Toshihisa Inoue, Yukio Watanabe, Shota Nunomura, Michio Kondo

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

To fabricate quantum dot solar cells of a high efficiency at a low cost, here we propose a Si quantum dot film which is composed of Si nano-crystallites embedded into a-Si:H and a single step method to deposit such Si quantum dot films using H2 + SiH4 VHF discharges. For the method, Si nano-crystallites of a small size dispersion and radicals produced in the discharges are co-deposited on a substrate to form Si quantum dot films. Using the method, we realized a volume fraction of dots in films of 0.3-70%. Photo- and dark-conductivity of films are in a range of 10- 11-10- 9 and 10- 5-10- 4 S/cm, respectively. We have examined effects of the size dispersion of nano-crystallites on electron mobility in a quantum dot Si solar cell by a simulation. The electron mobility in films for a size dispersion of 0.37 nm is about 50% of that in films for no size dispersion.

Original languageEnglish
Pages (from-to)5468-5471
Number of pages4
JournalSurface and Coatings Technology
Volume201
Issue number9-11 SPEC. ISS.
DOIs
Publication statusPublished - Feb 26 2007

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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