Single-walled carbon nanotube thin film transistor fabricated using solution prepared with 9,9-dioctyfluorenyl-2,7-diyl-bipyridine copolymer

Xun Yi, Hiroaki Ozawa, Gou Nakagawa, Tsuyohiko Fujigaya, Naotoshi Nakashima, Tanemasa Asano

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Performance of thin film transistor (TFT) whose channel is fabricated by using a solution process of single-walled carbon nanotube (SWCNT) has been studied. SWCNT solution is prepared by using 9,9-dioctyfluorenyl-2,7-diyl- bipyridine (PFO-BPy) copolymer as solubilizer. Over 4 decades' on/off ratio is obtained by using drop-coating at room temperature without any further optimization. Other solubilizers are chosen as control groups to measure the on/off ratio of SWCNT TFT to investigate effects of the use of PFO-BPy. Results suggest that thick SWCNT network should be uniformly established at the channel region and the channel is required to be formed with well-separated SWCNTs.

Original languageEnglish
Article number070207
JournalJapanese Journal of Applied Physics
Volume50
Issue number7 PART 1
DOIs
Publication statusPublished - Jul 1 2011

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Single-walled carbon nanotubes (SWCN)
Thin film transistors
copolymers
transistors
Copolymers
carbon nanotubes
thin films
coatings
Coatings
optimization
room temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Single-walled carbon nanotube thin film transistor fabricated using solution prepared with 9,9-dioctyfluorenyl-2,7-diyl-bipyridine copolymer. / Yi, Xun; Ozawa, Hiroaki; Nakagawa, Gou; Fujigaya, Tsuyohiko; Nakashima, Naotoshi; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Vol. 50, No. 7 PART 1, 070207, 01.07.2011.

Research output: Contribution to journalArticle

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