Single-walled carbon nanotube thin film transistor fabricated using solution prepared with 9,9-dioctyfluorenyl-2,7-diyl-bipyridine copolymer

Xun Yi; Hiroaki Ozawa; Gou Nakagawa; Tsuyohiko Fujigaya; Naotoshi Nakashima; Tanemasa Asano

doi:10.1143/JJAP.50.070207

Single-walled carbon nanotube thin film transistor fabricated using solution prepared with 9,9-dioctyfluorenyl-2,7-diyl-bipyridine copolymer

Xun Yi, Hiroaki Ozawa, Gou Nakagawa, Tsuyohiko Fujigaya, Naotoshi Nakashima, Tanemasa Asano

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Performance of thin film transistor (TFT) whose channel is fabricated by using a solution process of single-walled carbon nanotube (SWCNT) has been studied. SWCNT solution is prepared by using 9,9-dioctyfluorenyl-2,7-diyl- bipyridine (PFO-BPy) copolymer as solubilizer. Over 4 decades' on/off ratio is obtained by using drop-coating at room temperature without any further optimization. Other solubilizers are chosen as control groups to measure the on/off ratio of SWCNT TFT to investigate effects of the use of PFO-BPy. Results suggest that thick SWCNT network should be uniformly established at the channel region and the channel is required to be formed with well-separated SWCNTs.

Original language	English
Article number	070207
Journal	Japanese journal of applied physics
Volume	50
Issue number	7 PART 1
DOIs	https://doi.org/10.1143/JJAP.50.070207
Publication status	Published - Jul 1 2011

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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Single-walled carbon nanotube thin film transistor fabricated using solution prepared with 9,9-dioctyfluorenyl-2,7-diyl-bipyridine copolymer. / Yi, Xun; Ozawa, Hiroaki; Nakagawa, Gou; Fujigaya, Tsuyohiko; Nakashima, Naotoshi; Asano, Tanemasa.

In: Japanese journal of applied physics, Vol. 50, No. 7 PART 1, 070207, 01.07.2011.

Research output: Contribution to journal › Article › peer-review

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