TY - JOUR
T1 - Single-walled carbon nanotube thin film transistor fabricated using solution prepared with 9,9-dioctyfluorenyl-2,7-diyl-bipyridine copolymer
AU - Yi, Xun
AU - Ozawa, Hiroaki
AU - Nakagawa, Gou
AU - Fujigaya, Tsuyohiko
AU - Nakashima, Naotoshi
AU - Asano, Tanemasa
PY - 2011/7/1
Y1 - 2011/7/1
N2 - Performance of thin film transistor (TFT) whose channel is fabricated by using a solution process of single-walled carbon nanotube (SWCNT) has been studied. SWCNT solution is prepared by using 9,9-dioctyfluorenyl-2,7-diyl- bipyridine (PFO-BPy) copolymer as solubilizer. Over 4 decades' on/off ratio is obtained by using drop-coating at room temperature without any further optimization. Other solubilizers are chosen as control groups to measure the on/off ratio of SWCNT TFT to investigate effects of the use of PFO-BPy. Results suggest that thick SWCNT network should be uniformly established at the channel region and the channel is required to be formed with well-separated SWCNTs.
AB - Performance of thin film transistor (TFT) whose channel is fabricated by using a solution process of single-walled carbon nanotube (SWCNT) has been studied. SWCNT solution is prepared by using 9,9-dioctyfluorenyl-2,7-diyl- bipyridine (PFO-BPy) copolymer as solubilizer. Over 4 decades' on/off ratio is obtained by using drop-coating at room temperature without any further optimization. Other solubilizers are chosen as control groups to measure the on/off ratio of SWCNT TFT to investigate effects of the use of PFO-BPy. Results suggest that thick SWCNT network should be uniformly established at the channel region and the channel is required to be formed with well-separated SWCNTs.
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U2 - 10.1143/JJAP.50.070207
DO - 10.1143/JJAP.50.070207
M3 - Article
AN - SCOPUS:79960689020
VL - 50
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 7 PART 1
M1 - 070207
ER -