SiSn Film on Insulator by Low-Temperature Solid-Phase Crystallization

Tomohiro Kosugi; Kazuki Yagi; Taizoh Sadoh

doi:10.23919/AM-FPD49417.2020.9224477

SiSn Film on Insulator by Low-Temperature Solid-Phase Crystallization

Tomohiro Kosugi, Kazuki Yagi, Taizoh Sadoh

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Effects of the Sn concentration and film thickness on solid-phase crystallization of SiSn films on insulator have been investigated. It is found that growth velocities significantly increase with increasing Sn concentration from 5% to 10%. For low Sn concentration (5%), the growth velocities decease with decreasing film thickness. On the other hand, for high Sn concentration (10%), the growth velocities do not depend on the thickness. These phenomena suggest that the growth process for low Sn concentrations are easily affected by the interface.

Original language	English
Title of host publication	Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	99-100
Number of pages	2
ISBN (Electronic)	9784990875398
DOIs	https://doi.org/10.23919/AM-FPD49417.2020.9224477
Publication status	Published - Sept 2020
Event	27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2020 - Virtual, Kyoto, Japan Duration: Sept 1 2020 → Sept 4 2020

Publication series

Name	Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference	27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2020
Country/Territory	Japan
City	Virtual, Kyoto
Period	9/1/20 → 9/4/20

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering
Media Technology
Electronic, Optical and Magnetic Materials

Access to Document

10.23919/AM-FPD49417.2020.9224477

Cite this

Kosugi, T., Yagi, K., & Sadoh, T. (2020). SiSn Film on Insulator by Low-Temperature Solid-Phase Crystallization. In Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 99-100). [9224477] (Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/AM-FPD49417.2020.9224477

SiSn Film on Insulator by Low-Temperature Solid-Phase Crystallization. / Kosugi, Tomohiro; Yagi, Kazuki; Sadoh, Taizoh.
Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2020. p. 99-100 9224477 (Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kosugi, T, Yagi, K & Sadoh, T 2020, SiSn Film on Insulator by Low-Temperature Solid-Phase Crystallization. in Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 9224477, Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Institute of Electrical and Electronics Engineers Inc., pp. 99-100, 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2020, Virtual, Kyoto, Japan, 9/1/20. https://doi.org/10.23919/AM-FPD49417.2020.9224477

Kosugi T, Yagi K, Sadoh T. SiSn Film on Insulator by Low-Temperature Solid-Phase Crystallization. In Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc. 2020. p. 99-100. 9224477. (Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). doi: 10.23919/AM-FPD49417.2020.9224477

Kosugi, Tomohiro ; Yagi, Kazuki ; Sadoh, Taizoh. / SiSn Film on Insulator by Low-Temperature Solid-Phase Crystallization. Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 99-100 (Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

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abstract = "Effects of the Sn concentration and film thickness on solid-phase crystallization of SiSn films on insulator have been investigated. It is found that growth velocities significantly increase with increasing Sn concentration from 5% to 10%. For low Sn concentration (5%), the growth velocities decease with decreasing film thickness. On the other hand, for high Sn concentration (10%), the growth velocities do not depend on the thickness. These phenomena suggest that the growth process for low Sn concentrations are easily affected by the interface.",

author = "Tomohiro Kosugi and Kazuki Yagi and Taizoh Sadoh",

note = "Publisher Copyright: {\textcopyright} 2020 FTFMD. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2020 ; Conference date: 01-09-2020 Through 04-09-2020",

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N2 - Effects of the Sn concentration and film thickness on solid-phase crystallization of SiSn films on insulator have been investigated. It is found that growth velocities significantly increase with increasing Sn concentration from 5% to 10%. For low Sn concentration (5%), the growth velocities decease with decreasing film thickness. On the other hand, for high Sn concentration (10%), the growth velocities do not depend on the thickness. These phenomena suggest that the growth process for low Sn concentrations are easily affected by the interface.

AB - Effects of the Sn concentration and film thickness on solid-phase crystallization of SiSn films on insulator have been investigated. It is found that growth velocities significantly increase with increasing Sn concentration from 5% to 10%. For low Sn concentration (5%), the growth velocities decease with decreasing film thickness. On the other hand, for high Sn concentration (10%), the growth velocities do not depend on the thickness. These phenomena suggest that the growth process for low Sn concentrations are easily affected by the interface.

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ER -

SiSn Film on Insulator by Low-Temperature Solid-Phase Crystallization

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