SiSn Film on Insulator by Low-Temperature Solid-Phase Crystallization

Tomohiro Kosugi, Kazuki Yagi, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Effects of the Sn concentration and film thickness on solid-phase crystallization of SiSn films on insulator have been investigated. It is found that growth velocities significantly increase with increasing Sn concentration from 5% to 10%. For low Sn concentration (5%), the growth velocities decease with decreasing film thickness. On the other hand, for high Sn concentration (10%), the growth velocities do not depend on the thickness. These phenomena suggest that the growth process for low Sn concentrations are easily affected by the interface.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages99-100
Number of pages2
ISBN (Electronic)9784990875398
DOIs
Publication statusPublished - Sep 2020
Event27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2020 - Virtual, Kyoto, Japan
Duration: Sep 1 2020Sep 4 2020

Publication series

NameProceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2020
CountryJapan
CityVirtual, Kyoto
Period9/1/209/4/20

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Media Technology
  • Electronic, Optical and Magnetic Materials

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