Site preference of atoms in heusler alloys Fe3Si and Fe 2MnSi grown on ge(111) toward realization of Ge channel spin transistors

Yoshihito Maeda, Yusuke Hiraiwa, Kazumasa Narumi, Atsuo Kawasuso, Yosikazu Terai, Yuichiro Ando, Koji Ueda, Taizoh Sadoh, Kohei Hamaya, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Wc have examined quality of axial oricntation along thc Ge<111> direction in order to find dominant factors for epitaxy control of Fe or Fe layers on Ge(111) by 2.0MeV- 4He+ ion channeling measurements. The axial channeling along thc Gc<111> orientation reveled that the axial orientation at thc interface betwccn the Heusler alloy layer and Ge dcgraded as thc Mn content increased. This dcgradation may be causcd by increasing of a lattice misfit bctween Fe3-xMnxSi and Ge. We discusscd on atomic displacements consisting of thermal vibration and static displaccment due to disorders in the lattice using results obtained from low tcmperature channeling measurements.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - New Materials with High Spin Polarization and Their Applications
Pages13-18
Number of pages6
Publication statusPublished - 2008
EventNew Materials with High Spin Polarization and Their Applications - Boston, MA, United States
Duration: Dec 1 2008Dec 5 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1119
ISSN (Print)0272-9172

Other

OtherNew Materials with High Spin Polarization and Their Applications
CountryUnited States
CityBoston, MA
Period12/1/0812/5/08

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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