Site-specific stereograph of SiC(0001) surface by inverse matrix method

Fumihiko Matsui, Noriyuki Nishikayama, Naoyuki Maejima, Hirosuke Matsui, Kentaro Goto, Mie Hashimoto, Tomoaki Hatayama, Tomohiro Matsushita, Yukako Kato, Satoru Tanaka, Hiroshi Daimon

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Abstract

The 2π-steradian (full hemisphere) Si 2p and C 1s photoelectron intensity angular distributions (PIADs) of the 6H-SiC(0001) surface 4° off towards the [11̄00] direction were measured. In a bulk crystal, pairs of mirrored local atomic sites with respect to the {11̄00} planes exist. Thus, a sixfold symmetry is expected for PIADs from the bulk. However, all the measured PIADs showed a threefold symmetry owing to the preferential appearance of terraces with one type of local atomic site caused by anisotropic step bunching along the [112̄0] direction. Taking the finite inelastic mean free path of photoelectrons into account, PIADs for one kind of Si and C atomic sites were successfully derived by solving an inverse matrix. Three strong forward focusing peaks due to nearby Si and C atoms have been separated from those formed by farther atoms. They showed a circular dichroism of rotational shift around the incident-light axis, which corresponds to the parallax in stereo viewing.

Original languageEnglish
Article number013601
Journaljournal of the physical society of japan
Volume80
Issue number1
DOIs
Publication statusPublished - Jan 1 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Matsui, F., Nishikayama, N., Maejima, N., Matsui, H., Goto, K., Hashimoto, M., Hatayama, T., Matsushita, T., Kato, Y., Tanaka, S., & Daimon, H. (2011). Site-specific stereograph of SiC(0001) surface by inverse matrix method. journal of the physical society of japan, 80(1), [013601]. https://doi.org/10.1143/JPSJ.80.013601